Authors: Bollaert, S Cordier, Y Zaknoune, M Parenty, T Happy, H Cappy, A

Citation: S. Bollaert et al., HEMT's capability for millimeter wave applications, ANN TELECOM, 56(1-2), 2001, pp. 15-26

Authors: Bollaert, S Cordier, Y Zaknoune, M Happy, H Hoel, V Lepilliet, S Theron, D Cappy, A

Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027

Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Happy, H Cappy, A

Citation: J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253

Authors: Bollaert, S Cordier, Y Hoel, V Zaknoune, M Happy, H Lepilliet, S Cappy, A

Citation: S. Bollaert et al., Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate, IEEE ELEC D, 20(3), 1999, pp. 123-125