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Results:
1-8
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Results: 8
Authors:
Niu, GF
Liang, QQ
Cressler, JD
Webster, CS
Harame, DL
Citation: Gf. Niu et al., RF linearity characteristics of SiGeHBTs, IEEE MICR T, 49(9), 2001, pp. 1558-1565
Authors:
Harame, DL
Meyerson, BS
Citation: Dl. Harame et Bs. Meyerson, The early history of IBM's SiGe mixed signal technology, IEEE DEVICE, 48(11), 2001, pp. 2555-2567
Authors:
Niu, GF
Cressler, JD
Zhang, SM
Ansley, WE
Webster, CS
Harame, DL
Citation: Gf. Niu et al., A unified approach to RF and microwave noise parameter modeling in bipolartransistors, IEEE DEVICE, 48(11), 2001, pp. 2568-2574
Authors:
Harame, DL
Ahlgren, DC
Coolbaugh, DD
Dunn, JS
Freeman, GG
Gillis, JD
Groves, RA
Hendersen, GN
Johnson, RA
Joseph, AJ
Subbanna, S
Victor, AM
Watson, KM
Webster, CS
Zampardi, PJ
Citation: Dl. Harame et al., Current status and future trends of SiGeBiCMOS technology, IEEE DEVICE, 48(11), 2001, pp. 2575-2594
Authors:
Niu, GF
Cressler, JD
Shoga, M
Jobe, K
Chu, P
Harame, DL
Citation: Gf. Niu et al., Simulation of SEE-induced charge collection in UHV/CVD SiGeHBTs, IEEE NUCL S, 47(6), 2000, pp. 2682-2689
Authors:
Gogineni, U
Cressler, JD
Niu, G
Harame, DL
Citation: U. Gogineni et al., Hot electron and hot hole degradation of UHV/CVD SiGeHBT's, IEEE DEVICE, 47(7), 2000, pp. 1440-1448
Authors:
Salmon, SL
Cressler, JD
Jaeger, RC
Harame, DL
Citation: Sl. Salmon et al., The influence of Ge grading on the bias and temperature characteristics ofSiGeHBT's for precision analog circuits, IEEE DEVICE, 47(2), 2000, pp. 292-298
Authors:
Niu, GF
Zhang, SM
Cressler, JD
Joseph, AJ
Fairbanks, JS
Larson, LE
Webster, CS
Ansley, WE
Harame, DL
Citation: Gf. Niu et al., Noise modeling and SiGe profile design tradeoffs for RF applications, IEEE DEVICE, 47(11), 2000, pp. 2037-2044
Risultati:
1-8
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