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Results:
1-12
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Results: 12
Authors:
Hardtdegen, H
Schmidt, R
Wirtz, K
Mueck, A
Guadagnuolo, S
Vergani, G
Citation: H. Hardtdegen et al., On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen, J ELEC MAT, 30(11), 2001, pp. 1397-1401
Authors:
Hardtdegen, H
Kaluza, A
Gauer, D
vander Ahe, M
Grimm, M
Kauffmann, P
Kadinski, L
Citation: H. Hardtdegen et al., On the influence of gas inlet configuration with respect to homogeneity ina horizontal single wafer MOVPE reactor, J CRYST GR, 223(1-2), 2001, pp. 15-20
Authors:
Dauelsberg, M
Hardtdegen, H
Kadinski, L
Kaluza, A
Kaufmann, P
Citation: M. Dauelsberg et al., Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N-2 and H-2, J CRYST GR, 223(1-2), 2001, pp. 21-28
Authors:
Javorka, P
Alam, A
Nastase, N
Marso, M
Hardtdegen, H
Heuken, M
Luth, H
Kordos, P
Citation: P. Javorka et al., AlGaN/GaN round-HEMTs on (111) silicon substrates, ELECTR LETT, 37(22), 2001, pp. 1364-1366
Authors:
Kaluza, A
Schwarz, A
Gauer, D
Hardtdegen, H
Nastase, N
Luth, H
Schapers, T
Meertens, D
Maciel, A
Ryan, J
O'Sullivan, E
Citation: A. Kaluza et al., On the choice of precursors for the MOVPE-growth of high-quality Al(0.30)Gao(0.70)As/GaAs v-groove quantum wires with large subband spacing, J CRYST GR, 221, 2000, pp. 91-97
Authors:
Schapers, T
Muller, RP
Crecelius, G
Hardtdegen, H
Luth, H
Citation: T. Schapers et al., Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning, J APPL PHYS, 88(7), 2000, pp. 4440-4442
Authors:
Jakob, M
Stahl, H
Knoch, J
Appenzeller, J
Lengeler, B
Hardtdegen, H
Luth, H
Citation: M. Jakob et al., Direct determination of the Andreev reflection probability by means of point contact spectroscopy, APPL PHYS L, 76(9), 2000, pp. 1152-1154
Authors:
Jakob, M
Stahl, H
Knoch, J
Appenzeller, J
Lengeler, B
Hardtdegen, H
Luth, H
Citation: M. Jakob et al., Direct determination of the Andreev reflection probability by means of point contact spectroscopy (vol 76, pg 1152 2000), APPL PHYS L, 76(19), 2000, pp. 2800-2800
Authors:
Maciel, AC
Kim, J
O'Sullivan, ED
Ryan, JF
Schwarz, A
Kaluza, A
Hardtdegen, H
Schapers, T
Meertens, D
Dieker, C
Luth, H
Citation: Ac. Maciel et al., Optical and transport studies of hot electrons in modulation-doped quantumwires, PHYSICA B, 272(1-4), 1999, pp. 101-106
Authors:
Schapers, T
Muller, RP
Kaluza, A
Hardtdegen, H
Luth, H
Citation: T. Schapers et al., Adjustment of the critical current in a Nb-InxGa1-xAs/InP Josephson contact by light exposure, APPL PHYS L, 75(3), 1999, pp. 391-393
Authors:
Schmidt, R
von der Ahe, M
Dieker, C
Gauer, D
Hardtdegen, H
Hauck, T
Luysberg, M
Meertens, D
Schmitz, D
Citation: R. Schmidt et al., Contributions to understanding the optical properties of partially ordered(Al0.3Ga0.7)(0.52)In0.48P, J CRYST GR, 195(1-4), 1998, pp. 124-131
Authors:
Hardtdegen, H
Pristovsek, M
Menhal, H
Zettler, JT
Richter, W
Schmitz, D
Citation: H. Hardtdegen et al., In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere, J CRYST GR, 195(1-4), 1998, pp. 211-216
Risultati:
1-12
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