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Results: 1-25 | 26-39 |
Results: 26-39/39
Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
Authors: Xu, HZ Wang, ZG Kawabe, M Harrison, I Ansell, BJ Foxon, CT
Citation: Hz. Xu et al., Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE, J CRYST GR, 218(1), 2000, pp. 1-6
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
Authors: Xu, HZ Wang, ZG Harrison, I Bell, A Ansell, BJ Winser, AJ Cheng, TS Foxon, CT Kawabe, M
Citation: Hz. Xu et al., Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy, J CRYST GR, 217(3), 2000, pp. 228-232
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes
Authors: Andrianov, AV Dods, SRA Morgan, J Orton, JW Benson, TM Harrison, I Larkins, EC Daiminger, FX Vassilakis, E Hirtz, JP
Citation: Av. Andrianov et al., Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes, J APPL PHYS, 87(7), 2000, pp. 3227-3233
Strong blue emission from As doped GaN grown by molecular beam epitaxy
Authors: Winser, AJ Novikov, SV Davis, CS Cheng, TS Foxon, CT Harrison, I
Citation: Aj. Winser et al., Strong blue emission from As doped GaN grown by molecular beam epitaxy, APPL PHYS L, 77(16), 2000, pp. 2506-2508
Dissociative adsorption of Br-2 on Pt(111): Hot atom dynamics
Authors: Xu, H Harrison, I
Citation: H. Xu et I. Harrison, Dissociative adsorption of Br-2 on Pt(111): Hot atom dynamics, J PHYS CH B, 103(51), 1999, pp. 11233-11236
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 33(2), 1999, pp. 222-222
EXAFS studies of Mg doped InN grown on Al2O3
Authors: Blant, AV Cheng, TS Jeffs, NJ Flannery, LB Harrison, I Mosselmans, JFW Smith, AD Foxon, CT
Citation: Av. Blant et al., EXAFS studies of Mg doped InN grown on Al2O3, MAT SCI E B, 59(1-3), 1999, pp. 218-221
Nano-fabrication of GaN pillars using focused ion beam etching
Authors: Kuball, M Morrissey, FH Benyoucef, M Harrison, I Korakakis, D Foxon, CT
Citation: M. Kuball et al., Nano-fabrication of GaN pillars using focused ion beam etching, PHYS ST S-A, 176(1), 1999, pp. 355-358
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD
Authors: Harris, JJ Lee, KJ Harrison, I Flannery, LB Korakakis, D Cheng, TS Foxon, CT Bougrioua, Z Moerman, I Van der Stricht, W Thrush, EJ Hamilton, B Ferhah, K
Citation: Jj. Harris et al., Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD, PHYS ST S-A, 176(1), 1999, pp. 363-367
The influence of the annealing ambient on strain and doping in GaN during high-temperature processing
Authors: Kuball, M Hayes, JM Bell, A Harrison, I Korakakis, D Foxon, CT
Citation: M. Kuball et al., The influence of the annealing ambient on strain and doping in GaN during high-temperature processing, PHYS ST S-A, 176(1), 1999, pp. 759-762
Ga-metal inclusions in GaN grown on sapphire
Authors: Blant, AV Novikov, SV Cheng, TS Flannery, LB Harrison, I Campion, RP Larkins, EC Kribes, Y Foxon, CT
Citation: Av. Blant et al., Ga-metal inclusions in GaN grown on sapphire, J CRYST GR, 203(3), 1999, pp. 349-354
High-temperature processing of GaN: The influence of the annealing ambienton strain in GaN
Authors: Hayes, JM Kuball, M Bell, A Harrison, I Korakakis, D Foxon, CT
Citation: Jm. Hayes et al., High-temperature processing of GaN: The influence of the annealing ambienton strain in GaN, APPL PHYS L, 75(14), 1999, pp. 2097-2099
Improved multiple targets angle tracking algorithm using the joint probabilistic data association filter
Authors: Keche, M Woolfson, MS Harrison, I Ouamri, A
Citation: M. Keche et al., Improved multiple targets angle tracking algorithm using the joint probabilistic data association filter, IEE P-RAD S, 145(6), 1998, pp. 331-336
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 32(11), 1998, pp. 1256-1256
Risultati: 1-25 | 26-39 |