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Results:
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Results: 13
Authors:
Kicin, S
Novak, J
Hasenohrl, S
Kucera, M
Meertens, D
Citation: S. Kicin et al., Photoluminescence characterization of InGaP/GaAs/IaGaP quantum wires, MAT SCI E B, 80(1-3), 2001, pp. 184-187
Authors:
Lalinsky, T
Skriniarova, J
Kuzmik, J
Hasenohrl, S
Fox, A
Tomaska, M
Mozolova, Z
Kovacik, T
Krajcer, A
Kordos, P
Citation: T. Lalinsky et al., Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs, VACUUM, 61(2-4), 2001, pp. 323-327
Authors:
Kuzmik, J
Hasenohrl, S
Kudela, R
Hascik, S
Mozolova, Z
Lalinsky, T
Vogrincic, P
Breza, J
Skriniarova, J
Fox, A
Kordos, P
Citation: J. Kuzmik et al., InGaAs/InGaP HEMTs: technological optimization and analytical modelling, VACUUM, 61(2-4), 2001, pp. 333-337
Authors:
Elias, P
Cambel, V
Hasenohrl, S
Kostic, I
Citation: P. Elias et al., OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with{110} quasi facets, J CRYST GR, 233(1-2), 2001, pp. 141-149
Authors:
Novak, J
Hasenohrl, S
Alonso, MI
Garriga, M
Citation: J. Novak et al., Influence of tensile and compressive strain on the band gap energy of ordered InGaP, APPL PHYS L, 79(17), 2001, pp. 2758-2760
Authors:
Attolini, G
Bocchi, C
Germini, F
Pelosi, C
Parisini, A
Tarricone, L
Kudela, R
Hasenohrl, S
Citation: G. Attolini et al., Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE, MATER CH PH, 66(2-3), 2000, pp. 246-252
Authors:
Novak, J
Kicin, S
Hasenohrl, S
Vavra, I
Kucera, M
Hudek, P
Citation: J. Novak et al., InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE, MICROEL ENG, 51-2, 2000, pp. 11-17
Authors:
Cambel, V
Karapetrov, G
Elias, P
Hasenohrl, S
Kwok, WK
Krause, J
Manka, J
Citation: V. Cambel et al., Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K, MICROEL ENG, 51-2, 2000, pp. 333-342
Authors:
Kudela, R
Kucera, M
Olejnikova, B
Elias, P
Hasenohrl, S
Novak, J
Citation: R. Kudela et al., Formation of interfaces in InGaP/GaAs/InGaP quantum wells, J CRYST GR, 212(1-2), 2000, pp. 21-28
Authors:
Elias, P
Cambel, V
Hasenohrl, S
Hudek, P
Novak, J
Citation: P. Elias et al., SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etching, MAT SCI E B, 66(1-3), 1999, pp. 15-20
Authors:
Novak, J
Hasenohrl, S
Cambel, V
Kucera, M
Wehmann, HH
Wullner, D
Citation: J. Novak et al., Electrical and morphological properties of ordered InxGa1-xP, MAT SCI E B, 66(1-3), 1999, pp. 102-105
Authors:
Kicin, S
Novak, J
Kucera, M
Hasenohrl, S
Elias, P
Vavra, I
Hudek, P
Citation: S. Kicin et al., Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR, MAT SCI E B, 65(2), 1999, pp. 106-110
Authors:
Mares, JJ
Kristofik, J
Hubik, P
Feng, X
Novak, J
Hasenohrl, S
Citation: Jj. Mares et al., Highly disordered two-dimensional electron system in a weak magnetic field, EUROPH LETT, 45(3), 1999, pp. 374-380
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