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Results: 1-11 |
Results: 11
Polysilicon TFT technology for active matrix OLED displays
Authors: Stewart, M Howell, RS Pires, L Hatalis, MK
Citation: M. Stewart et al., Polysilicon TFT technology for active matrix OLED displays, IEEE DEVICE, 48(5), 2001, pp. 845-851
Poly-Si thin-film transistors on steel substrates
Authors: Howell, RS Stewart, M Karnik, SV Saha, SK Hatalis, MK
Citation: Rs. Howell et al., Poly-Si thin-film transistors on steel substrates, IEEE ELEC D, 21(2), 2000, pp. 70-72
Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films
Authors: Howell, RS Sarcona, G Saha, SK Hatalis, MK
Citation: Rs. Howell et al., Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films, J VAC SCI A, 18(1), 2000, pp. 87-93
High performance gated lateral polysilicon PIN diodes
Authors: Stewart, M Hatalis, MK
Citation: M. Stewart et Mk. Hatalis, High performance gated lateral polysilicon PIN diodes, SOL ST ELEC, 44(9), 2000, pp. 1613-1619
Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts
Authors: Sarcona, GT Stewart, M Hatalis, MK
Citation: Gt. Sarcona et al., Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts, IEEE ELEC D, 20(7), 1999, pp. 332-334
Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates
Authors: Kouvatsos, DN Voutsas, AT Hatalis, MK
Citation: Dn. Kouvatsos et al., Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates, J ELEC MAT, 28(1), 1999, pp. 19-25
Silicidation reactions with Co-Ni bilayers for low thermal budget microelectronic applications
Authors: Saha, SK Howell, RS Hatalis, MK
Citation: Sk. Saha et al., Silicidation reactions with Co-Ni bilayers for low thermal budget microelectronic applications, THIN SOL FI, 347(1-2), 1999, pp. 278-283
Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 degrees C strain point glass substrates
Authors: Hatalis, MK Kouvatsos, DN Kung, JH Voutsas, AT Kanicki, J
Citation: Mk. Hatalis et al., Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 degrees C strain point glass substrates, THIN SOL FI, 338(1-2), 1999, pp. 281-285
Elimination of hillock formation in Al interconnects using Ni or Co
Authors: Saha, SK Howell, RS Hatalis, MK
Citation: Sk. Saha et al., Elimination of hillock formation in Al interconnects using Ni or Co, J APPL PHYS, 86(1), 1999, pp. 625-633
Reaction mechanisms in aluminum-indium tin oxide ohmic contact metallization with Co and Ni barrier layers for active-matrix-display applications
Authors: Saha, SK Howell, RS Hatalis, MK
Citation: Sk. Saha et al., Reaction mechanisms in aluminum-indium tin oxide ohmic contact metallization with Co and Ni barrier layers for active-matrix-display applications, J ELCHEM SO, 146(8), 1999, pp. 3134-3138
Nickel silicides grown on amorphous silicon and silicon-germanium thin films
Authors: Sarcona, G Saha, SK Hatalis, MK
Citation: G. Sarcona et al., Nickel silicides grown on amorphous silicon and silicon-germanium thin films, EL SOLID ST, 1(5), 1998, pp. 233-234
Risultati: 1-11 |