Authors:
Howell, RS
Sarcona, G
Saha, SK
Hatalis, MK
Citation: Rs. Howell et al., Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films, J VAC SCI A, 18(1), 2000, pp. 87-93
Citation: Gt. Sarcona et al., Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts, IEEE ELEC D, 20(7), 1999, pp. 332-334
Citation: Dn. Kouvatsos et al., Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates, J ELEC MAT, 28(1), 1999, pp. 19-25
Citation: Sk. Saha et al., Silicidation reactions with Co-Ni bilayers for low thermal budget microelectronic applications, THIN SOL FI, 347(1-2), 1999, pp. 278-283
Citation: Mk. Hatalis et al., Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 degrees C strain point glass substrates, THIN SOL FI, 338(1-2), 1999, pp. 281-285
Citation: Sk. Saha et al., Reaction mechanisms in aluminum-indium tin oxide ohmic contact metallization with Co and Ni barrier layers for active-matrix-display applications, J ELCHEM SO, 146(8), 1999, pp. 3134-3138