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Citation: A. Niskanen et al., Thermogravimetric study of volatile precursors for chemical thin film deposition. Estimation of vapor pressures and source temperatures, J THERM ANA, 64(3), 2001, pp. 955-964

Authors: Hatanpaa, T Kansikas, J Mutikainen, I Leskela, M

Citation: T. Hatanpaa et al., Ancillary ligand effect on the properties of "Mg(thd)(2)" and crystal structures of [Mg(thd)(2)(ethylene-diamine)](2), [Mg(thd)(2)(tmeda)], and [Mg(thd)(2)(trien)] (vol 40, pg 788, 2001), INORG CHEM, 40(9), 2001, pp. 2208-2208

Authors: Hatanpaa, T Kansikas, J Mutikainen, I Leskela, M

Citation: T. Hatanpaa et al., Ancillary ligand effect on the properties of "Mg(thd)(2)" and crystal structures of [Mg(thd)(2)(ethylenediamine)](2), [Mg(thd)(2)(tmeda)], and [Mg(thd)(2)(trien)], INORG CHEM, 40(4), 2001, pp. 788-794

Authors: Vehkamaki, M Hatanpaa, T Hanninen, T Ritala, M Leskela, M

Citation: M. Vehkamaki et al., Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition, EL SOLID ST, 2(10), 1999, pp. 504-506

Authors: Hatanpaa, T Ihanus, J Kansikas, J Mutikainen, I Ritala, M Leskela, M

Citation: T. Hatanpaa et al., Properties of [Mg-2(thd)(4)] as a precursor for atomic layer deposition ofMgO thin films and crystal structures of [Mg-2(thd)(4)] and [Mg(thd)(2)(EtOH)(2)], CHEM MATER, 11(7), 1999, pp. 1846-1852