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Results: 1-10 |
Results: 10
Electron affinity of Bi using infrared laser photodetachment threshold spectroscopy - art. no. 024501
Authors: Bilodeau, RC Haugen, HK
Citation: Rc. Bilodeau et Hk. Haugen, Electron affinity of Bi using infrared laser photodetachment threshold spectroscopy - art. no. 024501, PHYS REV A, 6402(2), 2001, pp. 4501
X-ray emission from femtosecond laser micromachining
Authors: Thogersen, J Borowiec, A Haugen, HK McNeill, FE Stronach, IM
Citation: J. Thogersen et al., X-ray emission from femtosecond laser micromachining, APPL PHYS A, 73(3), 2001, pp. 361-363
Control of near-threshold detachment cross sections via laser polarization- art. no. 143001
Authors: Bilodeau, RC Scheer, M Haugen, HK
Citation: Rc. Bilodeau et al., Control of near-threshold detachment cross sections via laser polarization- art. no. 143001, PHYS REV L, 8714(14), 2001, pp. 3001
Near-threshold laser spectroscopy of iridium and platinum negative ions: Electron affinities and the threshold law - art. no. 012505
Authors: Bilodeau, RC Scheer, M Haugen, HK Brooks, RL
Citation: Rc. Bilodeau et al., Near-threshold laser spectroscopy of iridium and platinum negative ions: Electron affinities and the threshold law - art. no. 012505, PHYS REV A, 6001(1), 2000, pp. 2505
Experimental studies of Os-: Observation of a bound-bound electric dipole transition in an atomic negative ion
Authors: Bilodeau, RC Haugen, HK
Citation: Rc. Bilodeau et Hk. Haugen, Experimental studies of Os-: Observation of a bound-bound electric dipole transition in an atomic negative ion, PHYS REV L, 85(3), 2000, pp. 534-537
Studies of two-photon excitation and vacuum ultraviolet fluorescence in Nd: YLF
Authors: Dooley, PW Thogersen, J Gill, JD Haugen, HK Brooks, RL
Citation: Pw. Dooley et al., Studies of two-photon excitation and vacuum ultraviolet fluorescence in Nd: YLF, OPT COMMUN, 183(5-6), 2000, pp. 451-459
Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
Authors: Wallace, SG Robinson, BJ Mascher, P Haugen, HK Thompson, DA Dalacu, D Martinu, L
Citation: Sg. Wallace et al., Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design, APPL PHYS L, 76(19), 2000, pp. 2791-2793
Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors
Authors: Boudreau, MG Wallace, SG Balcaitis, G Murugkar, S Haugen, HK Mascher, P
Citation: Mg. Boudreau et al., Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors, APPL OPTICS, 39(6), 2000, pp. 1053-1058
Theoretical and experimental binding energies for the d(7)s(2) F-4 levels in Ru-, including calculated hyperfine structure and M1 decay rates
Authors: Norquist, PL Beck, DR Bilodeau, RC Scheer, M Srawley, RA Haugen, HK
Citation: Pl. Norquist et al., Theoretical and experimental binding energies for the d(7)s(2) F-4 levels in Ru-, including calculated hyperfine structure and M1 decay rates, PHYS REV A, 59(3), 1999, pp. 1896-1902
Binding energies in atomic negative ions: III
Authors: Andersen, T Haugen, HK Hotop, H
Citation: T. Andersen et al., Binding energies in atomic negative ions: III, J PHYS CH R, 28(6), 1999, pp. 1511-1533
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