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Results:
1-18
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Results: 18
Authors:
Rizza, GC
Strobel, M
Heinig, KH
Bernas, H
Citation: Gc. Rizza et al., Ion irradiation of gold inclusions in SiO2: Experimental evidence for inverse Ostwald ripening, NUCL INST B, 178, 2001, pp. 78-83
Authors:
Strobel, M
Heinig, KH
Michely, T
Citation: M. Strobel et al., Three-dimensional kinetic lattice Monte-Carlo simulation of ion erosion offcc(111) surfaces, NUCL INST B, 178, 2001, pp. 105-108
Authors:
Muller, T
Heinig, KH
Schmidt, B
Citation: T. Muller et al., Shape evolution of oxidized silicon V-grooves during high dose ion implantation, NUCL INST B, 178, 2001, pp. 109-114
Authors:
Borodin, VA
Heinig, KH
Schmidt, B
Oswald, S
Citation: Va. Borodin et al., Oxidation of Ge implanted into SiO2 layers: Modeling and XPS, NUCL INST B, 178, 2001, pp. 115-119
Authors:
Bernas, H
Heinig, KH
Williams, J
Lindner, JKN
Citation: H. Bernas et al., Proceedings of the E-MRS 2000 Spring Meeting Symposium R on Materials Science with Ion Beams Strasbourg, France, 30 May-2 June 2000, NUCL INST B, 178, 2001, pp. VII-VII
Authors:
Muller, T
Heinig, KH
Schmidt, B
Citation: T. Muller et al., Formation of Ge nanowires in oxidized silicon V-grooves by ion beam synthesis, NUCL INST B, 175, 2001, pp. 468-473
Authors:
Strobel, M
Heinig, KH
Michely, T
Citation: M. Strobel et al., Mechanisms of pit coarsening in ion erosion of fcc(111) surfaces: a kinetic 3D lattice Monte-Carlo study, SURF SCI, 486(1-2), 2001, pp. 136-156
Authors:
Michely, T
Kalff, M
Comsa, G
Strobel, M
Heinig, KH
Citation: T. Michely et al., Step edge diffusion and step atom detachment in surface evolution: Ion-erosion of Pt(111), PHYS REV L, 86(12), 2001, pp. 2589-2592
Authors:
Koch, T
Heinig, KH
Jentschel, M
Borner, HG
Citation: T. Koch et al., Study of interatomic potentials in ZnS - Crystal-GRID experiments versus ab initio calculations, J RES NAT I, 105(1), 2000, pp. 81-87
Authors:
Oswald, S
Schmidt, B
Heinig, KH
Citation: S. Oswald et al., XPS investigation with factor analysis for the study of Ge clustering in SiO2, SURF INT AN, 29(4), 2000, pp. 249-254
Authors:
Thees, HJ
Wittmaack, M
Stegemann, KH
von Borany, J
Heinig, KH
Gebel, T
Citation: Hj. Thees et al., Microstructure and electrical properties of gale SiO2 containing Ge nanoclusters for memory applications, MICROEL REL, 40(4-5), 2000, pp. 867-871
Authors:
Markwitz, A
Grotzschel, R
Heinig, KH
Rebohle, L
Skorupa, W
Citation: A. Markwitz et al., Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM, NUCL INST B, 152(2-3), 1999, pp. 319-324
Authors:
Strobel, M
Heinig, KH
Moller, W
Citation: M. Strobel et al., Can core/shell nanocrystals be formed by sequential ion implantation? Predictions from kinetic lattice Monte Carlo simulations, NUCL INST B, 148(1-4), 1999, pp. 104-109
Authors:
Heinig, KH
Schmidt, B
Markwitz, A
Grotzschel, R
Strobel, M
Oswald, S
Citation: Kh. Heinig et al., Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers, NUCL INST B, 148(1-4), 1999, pp. 969-974
Authors:
Borodin, VA
Heinig, KH
Schmidt, B
Citation: Va. Borodin et al., Modeling of Ge nanocluster evolution in ion-implanted SiO2 layer, NUCL INST B, 147(1-4), 1999, pp. 286-291
Authors:
Strobel, M
Heinig, KH
Moller, W
Meldrum, A
Zhou, DS
White, CW
Zuhr, RA
Citation: M. Strobel et al., Ion beam synthesis of gold nanoclusters in SiO2: Computer simulations versus experiments, NUCL INST B, 147(1-4), 1999, pp. 343-349
Authors:
von Borany, J
Heinig, KH
Grotzschel, R
Klimenkov, M
Strobel, M
Stegemann, KH
Thees, HJ
Citation: J. Von Borany et al., Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films, MICROEL ENG, 48(1-4), 1999, pp. 231-234
Authors:
von Borany, J
Grotzschel, R
Heinig, KH
Markwitz, A
Schmidt, B
Skorupa, W
Thees, HJ
Citation: J. Von Borany et al., The formation of narrow nanocluster bands in Ge-implanted SiO2-layers, SOL ST ELEC, 43(6), 1999, pp. 1159-1163
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