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Results:
1-15
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Results: 15
Authors:
Mah, KW
McGlynn, E
Mosnier, JP
Henry, MO
Castro, J
O'Mahony, D
Lunney, JG
Citation: Kw. Mah et al., Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere, MAT SCI E B, 82(1-3), 2001, pp. 128-130
Authors:
Henry, MO
McGlynn, E
Fryar, J
Lindner, S
Bollmann, J
Citation: Mo. Henry et al., The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes, NUCL INST B, 178, 2001, pp. 256-259
Authors:
Leitao, JP
Carmo, MC
Henry, MO
McGlynn, E
Citation: Jp. Leitao et al., Uniaxial stress study of the 1026-meV center in Si : Pt - art. no. 235208, PHYS REV B, 6323(23), 2001, pp. 5208
Authors:
Mah, KW
McGlynn, E
Castro, J
Lunney, JG
Mosnier, JP
O'Mahony, D
Henry, MO
Citation: Kw. Mah et al., Defect luminescence of GaN grown by pulsed laser deposition, J CRYST GR, 222(3), 2001, pp. 497-502
Authors:
McGuigan, KG
McGlynn, E
O'Cairbre, F
Love, J
Henry, MO
Citation: Kg. Mcguigan et al., Piezo-spectroscopic induced perturbations for defects in cubic crystals under uniaxial stress applied along arbitrary low-symmetry crystal directions, J PHYS-COND, 12(31), 2000, pp. 7055-7068
Authors:
Henry, MO
Deicher, M
Magerle, R
McGlynn, E
Stotzler, A
Citation: Mo. Henry et al., Photoluminescence analysis of semiconductors using radioactive isotopes, HYPER INTER, 129(1-4), 2000, pp. 443-460
Authors:
Henry, MO
Deicher, M
Magerle, R
McGlynn, E
Stotzler, A
Citation: Mo. Henry et al., Photoluminescence analysis of semiconductors using radioactive isotopes, HYPER INTER, 129(1-4), 2000, pp. 443-460
Authors:
Markov, VA
Cheng, HH
Chia, CT
Nikiforov, AI
Cherepanov, VA
Pchelyakov, OP
Zhuravlev, KS
Talochkin, AB
McGlynn, E
Henry, MO
Citation: Va. Markov et al., RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots, THIN SOL FI, 369(1-2), 2000, pp. 79-83
Authors:
Johnston, AM
Scrimgeour, CM
Henry, MO
Handley, LL
Citation: Am. Johnston et al., Isolation of NO3--N as 1-phenylazo-2-naphthol (Sudan-1) for measurement ofdelta N-15, RAP C MASS, 13(14), 1999, pp. 1531-1534
Authors:
Frehill, CA
Henry, MO
McGlynn, E
Lightowlers, EC
Safanov, A
Citation: Ca. Frehill et al., Cadmium-lithium defects in silicon, MAT SCI E B, 58(1-2), 1999, pp. 159-162
Authors:
Leitao, JP
Carmo, MC
Henry, MO
McGlynn, E
Bolmann, J
Lindner, S
Citation: Jp. Leitao et al., The 777 meV photoluminescence band in Si : Pt, PHYSICA B, 274, 1999, pp. 420-423
Authors:
Bollmann, J
Lindner, S
Henry, MO
McGlynn, E
Knack, S
Citation: J. Bollmann et al., Deep level anomalies in silicon doped with radioactive Au atoms, PHYSICA B, 274, 1999, pp. 433-436
Authors:
Gibson, M
McGlynn, E
Henry, MO
Citation: M. Gibson et al., Study of bound exciton excited state structure using photothermal ionisation spectroscopy, PHYSICA B, 274, 1999, pp. 1011-1014
Authors:
McGlynn, E
Henry, MO
McLoughlin, P
Lightowlers, EC
Citation: E. Mcglynn et al., Photoluminescence spectroscopy of an Al-C complex in silicon, PHYS REV B, 59(15), 1999, pp. 10084-10090
Authors:
Henry, MO
Alves, E
Bollmann, J
Burchard, A
Deicher, M
Fanciulli, M
Forkel-Wirth, D
Knopf, MH
Lindner, S
Magerle, R
McGlynn, E
McGuigan, KG
Soares, JC
Stotzler, A
Weyer, G
Citation: Mo. Henry et al., Radioactive isotope identifications of Au and Pt photoluminescence centresin silicon, PHYS ST S-B, 210(2), 1998, pp. 853-858
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1-15
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