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Citation: A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526

Authors: Bader, S Hahn, B Lugauer, HJ Lell, A Weimar, A Bruderl, G Baur, J Eisert, D Scheubeck, M Heppel, S Hangleiter, A Harle, V

Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182

Authors: Heppel, S Wirth, R Off, J Scholz, F Hangleiter, A Obloh, H Wagner, J Kirchner, C Kamp, M

Citation: S. Heppel et al., Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides, PHYS ST S-A, 176(1), 1999, pp. 73-77

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Citation: H. Kollmer et al., Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields, APPL PHYS L, 74(1), 1999, pp. 82-84