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Results: 1-18 |
Results: 18
Luminescent properties of sol-gel deposited Eu : TiO2 thin films
Authors: Garcia-Rocha, M Conde-Gallardo, A Hernandez-Calderon, I Palomino-Merino, R
Citation: M. Garcia-rocha et al., Luminescent properties of sol-gel deposited Eu : TiO2 thin films, MOD PHY L B, 15(17-19), 2001, pp. 769-773
Photoluminescence properties of the Eu3+ activator ion in the TiO2 host matrix
Authors: Conde-Gallardo, A Garcia-Rocha, M Hernandez-Calderon, I Palomino-Merino, R
Citation: A. Conde-gallardo et al., Photoluminescence properties of the Eu3+ activator ion in the TiO2 host matrix, APPL PHYS L, 78(22), 2001, pp. 3436-3438
Temperature dependence of exciton localization in Zn1-xCdxSe quantum wells
Authors: Diaz-Arencibia, P Hernandez-Calderon, I Hernandez-Ramirez, LM Tamargo, MC
Citation: P. Diaz-arencibia et al., Temperature dependence of exciton localization in Zn1-xCdxSe quantum wells, J VAC SCI B, 18(3), 2000, pp. 1526-1529
Resonant Raman scattering and photoluminescence enhancement in ZnCdSe quantum wells
Authors: Hernandez-Ramirez, LM Hernandez-Calderon, I
Citation: Lm. Hernandez-ramirez et I. Hernandez-calderon, Resonant Raman scattering and photoluminescence enhancement in ZnCdSe quantum wells, J VAC SCI B, 18(3), 2000, pp. 1542-1544
A two-level model for intra-well exciton migration in Zn1-xCdxSe quantum wells
Authors: Diaz-Arencibia, P Hernandez-Calderon, I Hernandez-Ramirez, LM Tamargo, MC
Citation: P. Diaz-arencibia et al., A two-level model for intra-well exciton migration in Zn1-xCdxSe quantum wells, PHYS ST S-B, 220(1), 2000, pp. 27-31
Determination of the exciton binding energy in ZnCdSe quantum wells by resonant Raman scattering
Authors: Hernandez-Ramirez, LM Hernandez-Calderon, I
Citation: Lm. Hernandez-ramirez et I. Hernandez-calderon, Determination of the exciton binding energy in ZnCdSe quantum wells by resonant Raman scattering, PHYS ST S-B, 220(1), 2000, pp. 205-208
GaAs surface oxide desorption by annealing in ultra high vacuum
Authors: Guillen-Cervantes, A Rivera-Alvarez, Z Lopez-Lopez, M Lopez-Luna, E Hernandez-Calderon, I
Citation: A. Guillen-cervantes et al., GaAs surface oxide desorption by annealing in ultra high vacuum, THIN SOL FI, 373(1-2), 2000, pp. 159-163
Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions
Authors: Lopez-Lopez, M Guillen-Cervantes, A Rivera-Alvarez, Z Lopez-Luna, E Hernandez-Calderon, I
Citation: M. Lopez-lopez et al., Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions, REV MEX FIS, 46(2), 2000, pp. 152-158
Photoluminescence properties of intra-well exciton migration in Zn1-xCdxSequantum wells
Authors: Diaz-Arencibia, P Hernandez-Calderon, I Hernandez-Ramirez, LM Tamargo, MC
Citation: P. Diaz-arencibia et al., Photoluminescence properties of intra-well exciton migration in Zn1-xCdxSequantum wells, MICROELEC J, 31(6), 2000, pp. 443-450
Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surfacetreatment
Authors: Mendez-Garcia, VH Lopez-Lopez, M Hernandez-Calderon, I
Citation: Vh. Mendez-garcia et al., Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surfacetreatment, J VAC SCI B, 17(3), 1999, pp. 1259-1262
Disorder-induced phonon modes, built-in electric fields and structural properties of CdTe/GaAs heterostructures grown by MBE
Authors: Melendez-Lira, M Jimenez-Sandoval, S Hernandez-Calderon, I
Citation: M. Melendez-lira et al., Disorder-induced phonon modes, built-in electric fields and structural properties of CdTe/GaAs heterostructures grown by MBE, SEMIC SCI T, 14(4), 1999, pp. 350-356
Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: a possible effect of pit filling and difference in thermal expansion coefficients
Authors: Constantino, ME Navarro-Contreras, H Vidal, MA Salazar-Hernandez, B Lastras-Martinez, A Hernandez-Calderon, I Lopez-Lopez, M
Citation: Me. Constantino et al., Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: a possible effect of pit filling and difference in thermal expansion coefficients, APPL SURF S, 151(3-4), 1999, pp. 271-279
Local atomic structure of deep level centers in doped II-VI semiconductors
Authors: Espinosa, FJ de Leon, JM Hernandez-Calderon, I
Citation: Fj. Espinosa et al., Local atomic structure of deep level centers in doped II-VI semiconductors, REV MEX FIS, 45, 1999, pp. 167-170
Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs
Authors: Constantino, ME Navarro-Contreras, H Vidal, MA Salazar-Hernandez, B Lastras-Martinez, A Hernandez-Calderon, I Lopez-Lopez, M
Citation: Me. Constantino et al., Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs, J PHYS D, 32(12), 1999, pp. 1293-1301
Observation of the photovoltaic effect in n-ZnSe/p-GaAs heterostructures
Authors: de Melo, O Santana, G Melendez-Lira, M Hernandez-Calderon, I
Citation: O. De Melo et al., Observation of the photovoltaic effect in n-ZnSe/p-GaAs heterostructures, J CRYST GR, 202, 1999, pp. 971-974
Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance
Authors: Constantino, ME Navarro-Contreras, H Salazar-Hernandez, B Vidal, MA Lastras-Martinez, A Lopez-Lopez, M Hernandez-Calderon, I
Citation: Me. Constantino et al., Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance, J APPL PHYS, 86(1), 1999, pp. 425-429
Electronic states in parabolic versus diffused quantum wells
Authors: Vlaev, SJ Gaggero-Sager, LM Contreras-Solorio, DA Hernandez-Calderon, I
Citation: Sj. Vlaev et al., Electronic states in parabolic versus diffused quantum wells, REV MEX FIS, 44, 1998, pp. 141-143
Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD
Authors: Constantino, ME Vidal, MA Salazar-Hernandez, B Navarro-Contreras, H Lopez-Lopez, M Melendez, M Hernandez-Calderon, I
Citation: Me. Constantino et al., Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD, J CRYST GR, 194(3-4), 1998, pp. 301-308
Risultati: 1-18 |