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Results:
1-12
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Results: 12
Authors:
Simanowski, S
Mermelstein, C
Walther, M
Herres, N
Kiefer, R
Rattunde, M
Schmitz, J
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation, J CRYST GR, 227, 2001, pp. 595-599
Authors:
Wagner, J
Geppert, T
Kohler, K
Ganser, P
Herres, N
Citation: J. Wagner et al., N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Ramanscattering, J APPL PHYS, 90(10), 2001, pp. 5027-5031
Authors:
Simanowski, S
Herres, N
Mermelstein, C
Kiefer, R
Schmitz, J
Walther, M
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Strain adjustment in (GaIn)(AsSb)/(A1Ga)(AsSb) QWs for 2.3-2.7 mu m laser structures, J CRYST GR, 209(1), 2000, pp. 15-20
Authors:
Serries, D
Peter, M
Herres, N
Winkler, K
Wagner, J
Citation: D. Serries et al., Raman and dielectric function spectra of strained GaAs1-xSbx layers on InP, J APPL PHYS, 87(12), 2000, pp. 8522-8525
The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling
Authors:
Gehrsitz, S
Reinhart, FK
Gourgon, C
Herres, N
Vonlanthen, A
Sigg, H
Citation: S. Gehrsitz et al., The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling, J APPL PHYS, 87(11), 2000, pp. 7825-7837
Authors:
Wagner, J
Kohler, K
Ganser, P
Herres, N
Citation: J. Wagner et al., GaAsN interband transitions involving localized and extended states probedby resonant Raman scattering and spectroscopic ellipsometry, APPL PHYS L, 77(22), 2000, pp. 3592-3594
Authors:
Herres, N
Obloh, H
Bachem, KH
Helming, K
Citation: N. Herres et al., X-ray analysis of the texture of heteroepitaxial gallium nitride films, MAT SCI E B, 59(1-3), 1999, pp. 202-206
Authors:
Gehrsitz, S
Sigg, H
Herres, N
Bachem, K
Kohler, K
Reinhart, FK
Citation: S. Gehrsitz et al., Compositional dependence of the elastic constants and the lattice parameter of AlxGa1-xAs, PHYS REV B, 60(16), 1999, pp. 11601-11610
Authors:
Simanowski, S
Walther, M
Schmitz, J
Kiefer, R
Herres, N
Fuchs, F
Maier, M
Mermelstein, C
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb)layers for 2.0-2.5 mu m laser structures on GaSb substrates, J CRYST GR, 202, 1999, pp. 849-853
Authors:
Yoshikawa, M
Kunzer, M
Wagner, J
Obloh, H
Schlotter, P
Schmidt, R
Herres, N
Kaufmann, U
Citation: M. Yoshikawa et al., Band-gap renormalization and band filling in Si-doped GaN films studied byphotoluminescence spectroscopy, J APPL PHYS, 86(8), 1999, pp. 4400-4402
Authors:
Peter, M
Herres, N
Fuchs, F
Winkler, K
Bachem, KH
Wagner, J
Citation: M. Peter et al., Band gaps and band offsets in strained GaAs1-ySby on InP grown by metalorganic chemical vapor deposition, APPL PHYS L, 74(3), 1999, pp. 410-412
Authors:
Peter, M
Kiefer, R
Fuchs, F
Herres, N
Winkler, K
Bachem, KH
Wagner, J
Citation: M. Peter et al., Light-emitting diodes and laser diodes based on a Ga1-xInxAs/GaAs1-ySby type II superlattice on InP substrate, APPL PHYS L, 74(14), 1999, pp. 1951-1953
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