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Results: 1-25/32
Authors:
Houssa, M
Stesmans, A
Heyns, MM
Citation: M. Houssa et al., Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2gate dielectric stacks, SEMIC SCI T, 16(6), 2001, pp. 427-432
Authors:
Houssa, M
Naili, M
Zhao, C
Bender, H
Heyns, MM
Stesmans, A
Citation: M. Houssa et al., Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks, SEMIC SCI T, 16(1), 2001, pp. 31-38
Authors:
Afanas'ev, VV
Houssa, M
Stesmans, A
Adriaenssens, GJ
Heyns, MM
Citation: Vv. Afanas'Ev et al., Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements, MICROEL ENG, 59(1-4), 2001, pp. 335-339
Authors:
Houssa, A
Afanas'ev, VV
Stesmans, A
Heyns, MM
Citation: A. Houssa et al., Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacksand the dispersive transport model, MICROEL ENG, 59(1-4), 2001, pp. 367-371
Authors:
Houssa, M
Naili, M
Heyns, MM
Stesmans, A
Citation: M. Houssa et al., Model for the charge trapping in high permittivity gate dielectric stacks, J APPL PHYS, 89(1), 2001, pp. 792-794
Authors:
De Smedt, F
De Gendt, S
Heyns, MM
Vinckier, C
Citation: F. De Smedt et al., The application of ozone in semiconductor cleaning processes - The solubility issue, J ELCHEM SO, 148(9), 2001, pp. G487-G493
Authors:
Houssa, M
Afanas'ev, VV
Stesmans, A
Heyns, MM
Citation: M. Houssa et al., Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks, APPL PHYS L, 79(19), 2001, pp. 3134-3136
Authors:
Houssa, M
Stesmans, A
Carter, RJ
Heyns, MM
Citation: M. Houssa et al., Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model, APPL PHYS L, 78(21), 2001, pp. 3289-3291
Authors:
Afanas'ev, VV
Houssa, M
Stesmans, A
Heyns, MM
Citation: Vv. Afanas'Ev et al., Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators, APPL PHYS L, 78(20), 2001, pp. 3073-3075
Morphology change of artificial crystal originated particles, and the effect on gate oxide integrity
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Schmolke, R
Citation: T. Bearda et al., Morphology change of artificial crystal originated particles, and the effect on gate oxide integrity, JPN J A P 2, 39(8B), 2000, pp. L841-L843
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Wallinga, H
Woerlee, P
Citation: T. Bearda et al., Breakdown and recovery of thin gate oxides, JPN J A P 2, 39(6B), 2000, pp. L582-L584
Authors:
Vereecke, G
Kondoh, E
Richardson, P
Maex, K
Heyns, MM
Citation: G. Vereecke et al., Wafer thermal desorption spectrometry in a rapid thermal processor using atmosheric pressure ionization mass spectrometry, IEEE SEMIC, 13(3), 2000, pp. 315-321
Authors:
Vereecke, G
Rohr, E
Heyns, MM
Citation: G. Vereecke et al., Influence of beam incidence angle on dry laser cleaning of surface particles, APPL SURF S, 157(1-2), 2000, pp. 67-73
Authors:
Houssa, M
Mertens, PW
Heyns, MM
Jeon, JS
Halliyal, A
Ogle, B
Citation: M. Houssa et al., Soft breakdown in very thin Ta2O5 gate dielectric layers, SOL ST ELEC, 44(3), 2000, pp. 521-525
Authors:
Houssa, M
Tuominen, M
Naili, M
Afanas'ev, V
Stesmans, A
Haukka, S
Heyns, MM
Citation: M. Houssa et al., Trap-assisted tunneling in high permittivity gate dielectric stacks, J APPL PHYS, 87(12), 2000, pp. 8615-8620
Authors:
Vereecke, G
Schaekers, M
Verstraete, K
Arnauts, S
Heyns, MM
Plante, W
Citation: G. Vereecke et al., Quantitative analysis of trace metals in silicon nitride films by a vapor phase decomposition/solution collection approach, J ELCHEM SO, 147(4), 2000, pp. 1499-1501
Authors:
Knotter, DM
de Gendt, S
Mertens, PW
Heyns, MM
Citation: Dm. Knotter et al., Silicon surface roughening mechanisms in ammonia hydrogen peroxide mixtures, J ELCHEM SO, 147(2), 2000, pp. 736-740
Authors:
Van Hoornick, NBH
Van Hoeymissen, JAB
Heyns, MM
Citation: Nbh. Van Hoornick et al., Recovery of tungsten from the exhaust of a tungsten chemical vapor deposition tool, J ELCHEM SO, 147(12), 2000, pp. 4665-4670
Authors:
Houssa, M
Stesmans, A
Naili, M
Heyns, MM
Citation: M. Houssa et al., Charge trapping in very thin high-permittivity gate dielectric layers, APPL PHYS L, 77(9), 2000, pp. 1381-1383
Authors:
Houssa, M
Afanas'ev, VV
Stesmans, A
Heyns, MM
Citation: M. Houssa et al., Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation, APPL PHYS L, 77(12), 2000, pp. 1885-1887
Authors:
Bearda, T
Mertens, PW
Heyns, MM
Schmolke, R
Citation: T. Bearda et al., Fabrication and characterization of artificial crystal originated particles, JPN J A P 2, 38(12B), 1999, pp. L1509-L1511
Authors:
Kondoh, E
Vereecke, G
Heyns, MM
Maex, K
Gutt, T
Citation: E. Kondoh et al., Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor, J VAC SCI A, 17(2), 1999, pp. 650-656
Authors:
Houssa, M
De Gendt, S
de Bokx, P
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., Effect of x-ray irradiation on the electrical characteristics of ultra-thin gate oxides, SEMIC SCI T, 14(9), 1999, pp. 741-746
Authors:
Houssa, M
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides, SEMIC SCI T, 14(10), 1999, pp. 892-896
Authors:
Houssa, M
De Gendt, S
de Bokx, P
Mertens, PW
Heyns, MM
Citation: M. Houssa et al., X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides, MICROEL ENG, 48(1-4), 1999, pp. 43-46