Authors:
Rousiere, O
Lemoine, D
Folliot, H
Hinooda, S
Granger, R
Citation: O. Rousiere et al., Two-dimensional electron systems in inversion layers of p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures, EUR PHY J B, 11(3), 1999, pp. 491-496