Authors:
Ma, TZ
Campbell, SA
Smith, R
Hoilien, N
He, BY
Gladfelter, WL
Hobbs, C
Buchanan, D
Taylor, C
Gribelyuk, M
Tiner, M
Coppel, M
Lee, JJ
Citation: Tz. Ma et al., Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates, IEEE DEVICE, 48(10), 2001, pp. 2348-2356
Authors:
Tseng, HH
Veteran, J
Tobin, PJ
Mogab, J
Tsui, PGY
Wang, V
Khare, M
Wang, XW
Ma, TP
Hobbs, C
Hegde, R
Hartig, M
Kenig, G
Blumenthal, R
Cotton, R
Kaushik, V
Tamagawa, T
Halpern, BL
Cui, GJ
Schmitt, JJ
Citation: Hh. Tseng et al., Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration, MAT SC S PR, 3(3), 2000, pp. 173-178
Authors:
Walsh, FS
Hobbs, C
Wells, DJ
Slater, CR
Fazeli, S
Citation: Fs. Walsh et al., Ectopic expression of NCAM in skeletal muscle of transgenic mice results in terminal sprouting at the neuromuscular junction and altered structure but not function, MOL CELL NE, 15(3), 2000, pp. 244-261
Authors:
Smith, RC
Taylor, CJ
Roberts, J
Campbell, SA
Tiner, M
Hegde, R
Hobbs, C
Gladfelter, WL
Citation: Rc. Smith et al., Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous TixSi1-xO2 films, CHEM MATER, 12(10), 2000, pp. 2822
Authors:
Gilmer, D
Hobbs, C
Hegde, R
La, L
Adetutu, O
Conner, J
Tiner, M
Prabhu, L
Bagchi, S
Tobin, P
Citation: D. Gilmer et al., Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics, J VAC SCI A, 18(4), 2000, pp. 1158-1162
Authors:
Lapsley, HM
Tribe, K
Tennant, C
Rosen, A
Hobbs, C
Newton, L
Citation: Hm. Lapsley et al., Deinstitutionalisation for long-term mental illness: cost differences in hospital and community care, AUST NZ J P, 34(3), 2000, pp. 491-495