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Results: 1-10 |
Results: 10
SiGe-based FETs: buffer issues and device results
Authors: Herzog, HJ Hackbarth, T Hock, G Zeuner, M Konig, U
Citation: Hj. Herzog et al., SiGe-based FETs: buffer issues and device results, THIN SOL FI, 380(1-2), 2000, pp. 36-41
Alternatives to thick MBE-grown relaxed SiGe buffers
Authors: Hackbarth, T Herzog, HJ Zeuner, M Hock, G Fitzgerald, BA Bulsara, M Rosenblad, C von Kanel, H
Citation: T. Hackbarth et al., Alternatives to thick MBE-grown relaxed SiGe buffers, THIN SOL FI, 369(1-2), 2000, pp. 148-151
0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max)
Authors: Hock, G Hackbarth, T Kab, N Herzog, HJ Enciso, M Aniel, F Crozat, P Adde, R Kohn, E Konig, U
Citation: G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition
Authors: Hock, G Kohn, E Rosenblad, C von Kanel, H Herzog, HJ Konig, U
Citation: G. Hock et al., High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition, APPL PHYS L, 76(26), 2000, pp. 3920-3922
High-frequency SiGe-n-MODFET for microwave applications
Authors: Zeuner, M Hackbarth, T Hock, G Behammer, D Konig, U
Citation: M. Zeuner et al., High-frequency SiGe-n-MODFET for microwave applications, IEEE MICR G, 9(10), 1999, pp. 410-412
Using entropies of reaction to predict changes in protein stability: tyrosine-67-phenylalanine variants of rat cytochrome c and yeast Iso-1 cytochromes c
Authors: Feinberg, BA Petro, L Hock, G Qin, WY Margoliash, E
Citation: Ba. Feinberg et al., Using entropies of reaction to predict changes in protein stability: tyrosine-67-phenylalanine variants of rat cytochrome c and yeast Iso-1 cytochromes c, J PHARM B, 19(1-2), 1999, pp. 115-125
Examination of initial and final state interactions in p plus H collisionsby the CTMC method
Authors: Tokesi, K Hock, G
Citation: K. Tokesi et G. Hock, Examination of initial and final state interactions in p plus H collisionsby the CTMC method, NUCL INST B, 154(1-4), 1999, pp. 263-266
Fast ion-atom collisions - Proceedings of the Seventh Workshop on Fast Ion-Atom Collisions Debrecen, Hungary, 9-11 September 1998
Authors: Sarkadi, L Hock, G
Citation: L. Sarkadi et G. Hock, Fast ion-atom collisions - Proceedings of the Seventh Workshop on Fast Ion-Atom Collisions Debrecen, Hungary, 9-11 September 1998, NUCL INST B, 154(1-4), 1999, pp. VII-VII
n- and p-type SiGe HFETs and circuits
Authors: Konig, U Zeuner, M Hock, G Hackbarth, T Gluck, M Ostermann, T Saxarra, M
Citation: U. Konig et al., n- and p-type SiGe HFETs and circuits, SOL ST ELEC, 43(8), 1999, pp. 1383-1388
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications
Authors: Hock, G Gluck, M Hackbarth, T Herzog, HJ Kohn, E
Citation: G. Hock et al., Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications, THIN SOL FI, 336(1-2), 1998, pp. 141-144
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