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Results: 1-19 |
Results: 19
Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111)
Authors: Nikishin, S Kipshidze, G Kuryatkov, V Choi, K Gherasoiu, I de Peralta, LG Zubrilov, A Tretyakov, V Copeland, K Prokofyeva, T Holtz, M Asomoza, R Kudryavtsev, Y Temkin, H
Citation: S. Nikishin et al., Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J VAC SCI B, 19(4), 2001, pp. 1409-1412
High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
Authors: Kipshidze, G Nikishin, S Kuryatkov, V Choi, K Gherasoiu, I Prokofyeva, T Holtz, M Temkin, H Hobart, KD Kub, FJ Fatemi, M
Citation: G. Kipshidze et al., High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 825-828
Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313
Authors: Prokofyeva, T Seon, M Vanbuskirk, J Holtz, M Nikishin, SA Faleev, NN Temkin, H Zollner, S
Citation: T. Prokofyeva et al., Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313, PHYS REV B, 6312(12), 2001, pp. 5313
Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN
Authors: Holtz, M Prokofyeva, T Seon, M Copeland, K Vanbuskirk, J Williams, S Nikishin, SA Tretyakov, V Temkin, H
Citation: M. Holtz et al., Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN, J APPL PHYS, 89(12), 2001, pp. 7977-7982
High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H
Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406
Development of a DNA immunoadsorbent: Coupling DNA on sepharose 4FF by an efficient activation method
Authors: Kong, DL Schuett, W Boeden, HF Kunkel, S Holtz, M Matic, G Yamada, R Yu, YT Klinkmann, H
Citation: Dl. Kong et al., Development of a DNA immunoadsorbent: Coupling DNA on sepharose 4FF by an efficient activation method, ARTIF ORGAN, 24(11), 2000, pp. 845-851
Ultrahigh pressure cell for materials synthesis
Authors: Hale, MA Clausi, D Willson, CG Dallas, T Hashemi, J Wilson, J James, D Holtz, M Kuhrts, K Combs, B
Citation: Ma. Hale et al., Ultrahigh pressure cell for materials synthesis, REV SCI INS, 71(7), 2000, pp. 2784-2790
Visible and ultraviolet Raman scattering studies of Si1-xGex alloys
Authors: Holtz, M Duncan, WM Zollner, S Liu, R
Citation: M. Holtz et al., Visible and ultraviolet Raman scattering studies of Si1-xGex alloys, J APPL PHYS, 88(5), 2000, pp. 2523-2528
Selective growth of high quality GaN on Si(111) substrates
Authors: Seon, M Prokofyeva, T Holtz, M Nikishin, SA Faleev, NN Temkin, H
Citation: M. Seon et al., Selective growth of high quality GaN on Si(111) substrates, APPL PHYS L, 76(14), 2000, pp. 1842-1844
Excitation intensity dependence of photoluminescence from narrow < 100 >- and < 111 > A-grown InxGa1-xAs/GaAs single quantum wells
Authors: Sauncy, T Holtz, M Brafman, O Fekete, D Finkelstein, Y
Citation: T. Sauncy et al., Excitation intensity dependence of photoluminescence from narrow < 100 >- and < 111 > A-grown InxGa1-xAs/GaAs single quantum wells, PHYS REV B, 59(7), 1999, pp. 5049-5055
Photoluminescence studies of < 100 > and < 111 > InxGa1-xAs/GaAs single quantum wells under hydrostatic pressure
Authors: Sauncy, T Holtz, M Brafman, O Fekete, D Finkelstein, Y
Citation: T. Sauncy et al., Photoluminescence studies of < 100 > and < 111 > InxGa1-xAs/GaAs single quantum wells under hydrostatic pressure, PHYS REV B, 59(7), 1999, pp. 5056-5063
Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2
Authors: Mintairov, AM Sadchikov, NA Sauncy, T Holtz, M Seryogin, GA Nikishin, SA Temkin, H
Citation: Am. Mintairov et al., Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2, PHYS REV B, 59(23), 1999, pp. 15197-15207
Raman studies of heavily carbon doped GaAs
Authors: Seon, M Holtz, M Duncan, WM Kim, TS
Citation: M. Seon et al., Raman studies of heavily carbon doped GaAs, J APPL PHYS, 85(10), 1999, pp. 7224-7230
High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
Authors: Nikishin, SA Antipov, VG Francoeur, S Faleev, NN Seryogin, GA Elyukhin, VA Temkin, H Prokofyeva, TI Holtz, M Konkar, A Zollner, S
Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486
High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S Grave de Peralta, L Seryogin, GA Temkin, H Prokofyeva, TI Holtz, M Chu, SNG
Citation: Sa. Nikishin et al., High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, APPL PHYS L, 75(14), 1999, pp. 2073-2075
Micro-Raman imaging of GaN hexagonal island structures
Authors: Holtz, M Seon, M Prokofyeva, T Temkin, H Singh, R Dabkowski, FP Moustakas, TD
Citation: M. Holtz et al., Micro-Raman imaging of GaN hexagonal island structures, APPL PHYS L, 75(12), 1999, pp. 1757-1759
Order-disorder transition in epitaxial ZnSnP2
Authors: Seryogin, GA Nikishin, SA Temkin, H Mintairov, AM Merz, JL Holtz, M
Citation: Ga. Seryogin et al., Order-disorder transition in epitaxial ZnSnP2, APPL PHYS L, 74(15), 1999, pp. 2128-2130
Ultraviolet Raman stress mapping in silicon
Authors: Holtz, M Carty, JC Duncan, WM
Citation: M. Holtz et al., Ultraviolet Raman stress mapping in silicon, APPL PHYS L, 74(14), 1999, pp. 2008-2010
Small-volume raman spectroscopy with a liquid core waveguide
Authors: Holtz, M Dasgupta, PK Zhang, GF
Citation: M. Holtz et al., Small-volume raman spectroscopy with a liquid core waveguide, ANALYT CHEM, 71(14), 1999, pp. 2934-2938
Risultati: 1-19 |