AAAAAA
Results: 26-50/102
Authors:
Bottcher, T
Einfeldt, S
Figge, S
Chierchia, R
Heinke, H
Hommel, D
Speck, JS
Citation: T. Bottcher et al., The role of high-temperature island coalescence in the development of stresses in GaN films, APPL PHYS L, 78(14), 2001, pp. 1976-1978
Authors:
Talarmin, A
Trochu, J
Gardon, J
Laventure, S
Hommel, D
Lelarge, J
Labeau, B
Digoutte, JP
Hulin, A
Sarthou, JL
Citation: A. Talarmin et al., Tonate virus infection in French Guiana: Clinical aspects and seroepidemiologic study, AM J TROP M, 64(5-6), 2001, pp. 274-279
Authors:
Kirchner, V
Heinke, H
Einfeldt, S
Hommel, D
Domagala, JZ
Leszczynski, M
Citation: V. Kirchner et al., Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers, MRS I J N S, 5, 2000, pp. NIL_335-NIL_340
Authors:
Hommel, D
Heraud, JM
Hulin, A
Talarmin, A
Citation: D. Hommel et al., Association of tonate virus (subtype IIIB of the Venezuelan equine encephalitis complex) with encephalitis in a human, CLIN INF D, 30(1), 2000, pp. 188-190
Authors:
Bacher, G
Weigand, R
Seufert, J
Gippius, NA
Kulakovskii, VD
Forchel, A
Leonardi, K
Hommel, D
Citation: G. Bacher et al., Dynamics of excitons and biexcitons in one single quantum dot, PHYS ST S-B, 221(1), 2000, pp. 25-29
Authors:
Davies, JJ
Wolverson, D
Griffin, IJ
Karimov, OZ
Orange, CL
Hommel, D
Behringer, M
Citation: Jj. Davies et al., Gyromagnetic ratios of electrons confined in quantum wells in ZnSe/ZnxMg1-xSySe1-y heterostructures, PHYS REV B, 62(15), 2000, pp. 10329-10334
Authors:
Baume, P
Behringer, M
Gutowski, J
Hommel, D
Citation: P. Baume et al., Calculation of the Coulomb broadening of donor-acceptor pair emission in compensated semiconductors, PHYS REV B, 62(12), 2000, pp. 8023-8029
Authors:
Kasic, A
Schubert, M
Einfeldt, S
Hommel, D
Tiwald, TE
Citation: A. Kasic et al., Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry, PHYS REV B, 62(11), 2000, pp. 7365-7377
Authors:
Homburg, O
Sebald, K
Michler, P
Gutowski, J
Wenisch, H
Hommel, D
Citation: O. Homburg et al., Negatively charged trion in ZnSe single quantum wells with very low electron densities, PHYS REV B, 62(11), 2000, pp. 7413-7419
Authors:
Klude, M
Fehrer, M
Hommel, D
Citation: M. Klude et al., High-power operation of ZnSe-based cw-laser diodes, PHYS ST S-A, 180(1), 2000, pp. 21-26
Authors:
Heinke, H
Haase, L
Grossmann, V
Kirchner, V
Hommel, D
Citation: H. Heinke et al., Thermally induced strain in ZnSe and GaN epitaxial layers studied by high-resolution X-ray diffraction at variable temperatures, PHYS ST S-A, 180(1), 2000, pp. 189-194
Authors:
Schulz, O
Strassburg, M
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: O. Schulz et al., Optimised implantation-induced disordering for lowering the threshold current density of II-VI laser diodes, PHYS ST S-A, 180(1), 2000, pp. 213-216
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Bottcher, T
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Evidence for phase separation in InGaN by resonant Raman scattering, PHYS ST S-A, 179(1), 2000, pp. R4-R6
Authors:
Luerssen, D
Bleher, R
Kalt, H
Richter, H
Schimmel, T
Rosenauer, A
Litvinov, D
Kamilli, A
Gerthsen, D
Jobst, B
Ohkawa, K
Hommel, D
Citation: D. Luerssen et al., Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells, PHYS ST S-A, 178(1), 2000, pp. 189-192
Authors:
Kulakovskii, VD
Weigand, R
Bacher, G
Seufert, J
Kummell, T
Forchel, A
Leonardi, K
Hommel, D
Citation: Vd. Kulakovskii et al., Optical spectroscopy on one and two exciton states in ZnSe-based single quantum dots, PHYS ST S-A, 178(1), 2000, pp. 323-326
Authors:
Trondle, D
Wachter, S
Luerssen, D
Kalt, H
Blewett, IJ
Galbraith, I
Ohkawa, K
Hommel, D
Citation: D. Trondle et al., Spin-dependent exciton-exciton interaction in ZnSe quantum wells, PHYS ST S-A, 178(1), 2000, pp. 535-538
Authors:
Figge, S
Bottcher, T
Einfeldt, S
Hommel, D
Citation: S. Figge et al., In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers, J CRYST GR, 221, 2000, pp. 262-266
Authors:
Stemmer, J
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Aderhold, J
Sanchez, AM
Pacheco, FJ
Molina, SI
Fehrer, M
Hommel, D
Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Authors:
Grossmann, V
Heinke, H
Leonardi, K
Hommel, D
Citation: V. Grossmann et al., Generation of misfit dislocations due to thermally induced strain - a study by temperature-dependent HRXRD, J CRYST GR, 214, 2000, pp. 447-451
Authors:
Strauf, S
Michler, P
Gutowski, J
Klude, M
Hommel, D
Citation: S. Strauf et al., Shallow donors in ultrathin nitrogen-doped ZnSe layers - a novel or a disregarded compensation mechanism in II-VI device structures?, J CRYST GR, 214, 2000, pp. 497-501
Authors:
Heinke, H
Passow, T
Stockmann, A
Selke, H
Leonardi, K
Hommel, D
Citation: H. Heinke et al., Analysis of cadmium diffusion in ZnSe by X-ray diffraction and transmission electron microscopy, J CRYST GR, 214, 2000, pp. 585-589
Authors:
Seedorf, T
Cornelissen, M
Leonardi, K
Hommel, D
Selke, H
Ryder, PL
Citation: T. Seedorf et al., Comparative study of molecular beam and migration-enhanced epitaxy of ZnCdSe quantum wells: influence on interface and composition fluctuations, J CRYST GR, 214, 2000, pp. 602-605
Authors:
Passow, T
Heinke, H
Kayser, D
Leonardi, K
Hommel, D
Citation: T. Passow et al., Growth of (Zn)CdSe quantum structures on vicinal GaAs(001) substrates: step flow growth versus strain effects, J CRYST GR, 214, 2000, pp. 606-609
Authors:
Luerssen, D
Bleher, R
Kalt, H
Richter, H
Schimmel, T
Rosenauer, A
Litvinov, D
Kamilli, A
Gerthsen, D
Jobst, B
Ohkawa, K
Hommel, D
Citation: D. Luerssen et al., Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 634-638
Authors:
Weigand, R
Seufert, J
Bacher, G
Kulakovskii, VD
Kummell, T
Forchel, A
Leonardi, K
Hommel, D
Citation: R. Weigand et al., Spin and exchange effects in CdSe/ZnSe quantum dots probed by single-dot spectroscopy, J CRYST GR, 214, 2000, pp. 737-741