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Results: 1-25/40
Authors:
Kota, J
Hsieh, KC
Jokipii, JR
Czechowski, A
Hilchenbach, M
Citation: J. Kota et al., Viewing corotating interaction regions globally using energetic neutral atoms, J GEO R-S P, 106(A11), 2001, pp. 24907-24914
Authors:
Hoke, WE
Lemonias, PJ
Kennedy, TD
Torabi, A
Tong, EK
Bourque, RJ
Jang, JH
Cueva, G
Dumka, DC
Adesida, I
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1505-1509
Authors:
Hoke, WE
Lemonias, PJ
Kennedy, TD
Torabi, A
Tong, EK
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Molecular beam epitaxial growth and characterization of strain-compensatedAl0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1519-1523
Authors:
Pickrell, GW
Chang, KL
Lin, HC
Hsieh, KC
Cheng, KY
Citation: Gw. Pickrell et al., Very-low-temperature molecular beam epitaxial growth of GaP/AlAs heterostructures for distributed Bragg reflector applications, J VAC SCI B, 19(4), 2001, pp. 1536-1540
Authors:
Chang, HS
Pon, JX
Hsieh, KC
Chen, CC
Citation: Hs. Chang et al., Intermetallic growth of wire-bond at 175 degrees C high temperature aging, J ELEC MAT, 30(9), 2001, pp. 1171-1177
Authors:
Jih, CG
Huang, JS
Hsieh, KC
Citation: Cg. Jih et al., Performance evaluation of single-sludge reactor system treating high-strength nitrogen wastewater, J HAZARD M, 85(3), 2001, pp. 213-227
Authors:
Mitchell, DG
Hsieh, KC
Curtis, CC
Hamilton, DC
Voss, HD
Roelof, EC
Brandt, PC
Citation: Dg. Mitchell et al., Imaging two geomagnetic storms in energetic neutral atoms, GEOPHYS R L, 28(6), 2001, pp. 1151-1154
Authors:
Wohlert, DE
Pickrell, GW
Chang, KL
Hsieh, KC
Cheng, KY
Citation: De. Wohlert et al., Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength, J CRYST GR, 227, 2001, pp. 985-989
Authors:
Wohlert, DE
Change, KL
Pickrell, GW
Hsieh, KC
Cheng, KY
Citation: De. Wohlert et al., Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires, J APPL PHYS, 90(11), 2001, pp. 5623-5626
Authors:
Chang, KL
Pickrell, GW
Wohlert, DE
Epple, JH
Lin, HC
Cheng, KY
Hsieh, KC
Citation: Kl. Chang et al., Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As), J APPL PHYS, 89(1), 2001, pp. 747-752
Authors:
Chung, T
Bank, SR
Epple, J
Hsieh, KC
Citation: T. Chung et al., Current gain dependence on subcollector and etch-stop doping in InGaP/GaAsHBTs, IEEE DEVICE, 48(5), 2001, pp. 835-839
Authors:
Czechowski, A
Fichtner, H
Grzedzielski, S
Hilchenbach, M
Hsieh, KC
Jokipii, JR
Kausch, T
Koda, J
Shaw, A
Citation: A. Czechowski et al., Anomalous cosmic rays and the generation of energetic neutrals in the region beyond the termination shock, ASTRON ASTR, 368(2), 2001, pp. 622-634
Authors:
Pickrell, GW
Lin, HC
Chang, KL
Hsieh, KC
Cheng, KY
Citation: Gw. Pickrell et al., Fabrication of GaP/Al-oxide distributed Bragg reflectors for the visible spectrum, APPL PHYS L, 78(8), 2001, pp. 1044-1046
Authors:
Pan, TM
Lei, TF
Chao, TS
Chang, KL
Hsieh, KC
Citation: Tm. Pan et al., High quality ultrathin CoTiO3 high-k gate dielectrics, EL SOLID ST, 3(9), 2000, pp. 433-434
Authors:
Pickrell, GW
Chang, KL
Epple, JH
Cheng, KY
Hsieh, KC
Citation: Gw. Pickrell et al., Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy, J VAC SCI B, 18(6), 2000, pp. 2611-2614
Authors:
Wohlert, DE
Chang, KL
Lin, HC
Hsieh, KC
Cheng, KY
Citation: De. Wohlert et al., Improvement of AlAs-GaAs interface roughness grown with high As overpressures, J VAC SCI B, 18(3), 2000, pp. 1590-1593
Authors:
Hoke, WE
Lyman, PS
Whelan, CS
Mosca, JJ
Torabi, A
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4, J VAC SCI B, 18(3), 2000, pp. 1638-1641
Authors:
Hong, M
Kortan, AR
Kwo, J
Mannaerts, JP
Krajewski, JJ
Lu, ZH
Hsieh, KC
Cheng, KY
Citation: M. Hong et al., Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions, J VAC SCI B, 18(3), 2000, pp. 1688-1691
Authors:
Hsieh, KC
Chou, FF
Citation: Kc. Hsieh et Ff. Chou, Nonsurgical treatment of thyroid injury after blunt cervical trauma, AM J EMER M, 18(6), 2000, pp. 739-741
Authors:
Hsieh, KC
Martens, T
Citation: Kc. Hsieh et T. Martens, Ag and Cu migration phenomena on wire-bonding, J ELEC MAT, 29(10), 2000, pp. 1229-1232
Authors:
Joo, SW
Hsieh, KC
Citation: Sw. Joo et Kc. Hsieh, Interfacial instabilities in thin stratified viscous fluids under microgravity, FLUID DYN R, 26(3), 2000, pp. 203-217
Authors:
Mitchell, DG
Jaskulek, SE
Schlemm, CE
Keath, EP
Thompson, RE
Tossman, BE
Boldt, JD
Hayes, JR
Andrews, GB
Paschalidis, N
Hamilton, DC
Lundgren, RA
Tums, EO
Wilson, P
Voss, HD
Prentice, D
Hsieh, KC
Curtis, CC
Powell, FR
Citation: Dg. Mitchell et al., High energy neutral atom (HENA) imager for the IMAGE mission, SPACE SCI R, 91(1-2), 2000, pp. 67-112
Authors:
Chang, KL
Epple, JH
Pickrell, GW
Lin, HC
Cheng, KY
Hsieh, KC
Citation: Kl. Chang et al., Strain relaxation and defect reduction in InxGa1-xAs/GaAs by lateral oxidation of an underlying AlGaAs layer, J APPL PHYS, 88(11), 2000, pp. 6922-6924
Authors:
Chung, T
Bank, S
Hsieh, KC
Citation: T. Chung et al., High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD, ELECTR LETT, 36(22), 2000, pp. 1885-1886
Authors:
Epple, JH
Chang, KL
Pickrell, GW
Cheng, KY
Hsieh, KC
Citation: Jh. Epple et al., Thermal wet oxidation of GaP and Al0.4Ga0.6P, APPL PHYS L, 77(8), 2000, pp. 1161-1163