Authors:
Hoke, WE
Lemonias, PJ
Kennedy, TD
Torabi, A
Tong, EK
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Molecular beam epitaxial growth and characterization of strain-compensatedAl0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1519-1523
Citation: Cg. Jih et al., Performance evaluation of single-sludge reactor system treating high-strength nitrogen wastewater, J HAZARD M, 85(3), 2001, pp. 213-227
Authors:
Wohlert, DE
Pickrell, GW
Chang, KL
Hsieh, KC
Cheng, KY
Citation: De. Wohlert et al., Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength, J CRYST GR, 227, 2001, pp. 985-989
Authors:
Wohlert, DE
Change, KL
Pickrell, GW
Hsieh, KC
Cheng, KY
Citation: De. Wohlert et al., Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires, J APPL PHYS, 90(11), 2001, pp. 5623-5626
Authors:
Czechowski, A
Fichtner, H
Grzedzielski, S
Hilchenbach, M
Hsieh, KC
Jokipii, JR
Kausch, T
Koda, J
Shaw, A
Citation: A. Czechowski et al., Anomalous cosmic rays and the generation of energetic neutrals in the region beyond the termination shock, ASTRON ASTR, 368(2), 2001, pp. 622-634
Authors:
Pickrell, GW
Lin, HC
Chang, KL
Hsieh, KC
Cheng, KY
Citation: Gw. Pickrell et al., Fabrication of GaP/Al-oxide distributed Bragg reflectors for the visible spectrum, APPL PHYS L, 78(8), 2001, pp. 1044-1046
Citation: Gw. Pickrell et al., Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy, J VAC SCI B, 18(6), 2000, pp. 2611-2614
Authors:
Hoke, WE
Lyman, PS
Whelan, CS
Mosca, JJ
Torabi, A
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4, J VAC SCI B, 18(3), 2000, pp. 1638-1641
Authors:
Mitchell, DG
Jaskulek, SE
Schlemm, CE
Keath, EP
Thompson, RE
Tossman, BE
Boldt, JD
Hayes, JR
Andrews, GB
Paschalidis, N
Hamilton, DC
Lundgren, RA
Tums, EO
Wilson, P
Voss, HD
Prentice, D
Hsieh, KC
Curtis, CC
Powell, FR
Citation: Dg. Mitchell et al., High energy neutral atom (HENA) imager for the IMAGE mission, SPACE SCI R, 91(1-2), 2000, pp. 67-112
Authors:
Chang, KL
Epple, JH
Pickrell, GW
Lin, HC
Cheng, KY
Hsieh, KC
Citation: Kl. Chang et al., Strain relaxation and defect reduction in InxGa1-xAs/GaAs by lateral oxidation of an underlying AlGaAs layer, J APPL PHYS, 88(11), 2000, pp. 6922-6924