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Results: 1-11 |
Results: 11
Interface states density distribution in Au/n-GaAs Schottky diodes on n-Geand n-GaAs substrates
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Interface states density distribution in Au/n-GaAs Schottky diodes on n-Geand n-GaAs substrates, MAT SCI E B, 87(2), 2001, pp. 141-147
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
Authors: Hudait, MK Venkateswarlu, P Krupanidhi, SB
Citation: Mk. Hudait et al., Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures, SOL ST ELEC, 45(1), 2001, pp. 133-141
Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy, J APPL PHYS, 89(11), 2001, pp. 5972-5979
Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes, SOL ST ELEC, 44(6), 2000, pp. 1089-1097
Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation, MATER RES B, 35(6), 2000, pp. 909-919
Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy, MATER RES B, 35(1), 2000, pp. 125-133
Growth, optical, and electron transport studies across isotype n-GaAs/n-Geheterojunctions
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Growth, optical, and electron transport studies across isotype n-GaAs/n-Geheterojunctions, J VAC SCI B, 17(3), 1999, pp. 1003-1010
Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodesat low temperatures
Authors: Hardikar, S Hudait, MK Modak, P Krupanidhi, SB Padha, N
Citation: S. Hardikar et al., Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodesat low temperatures, APPL PHYS A, 68(1), 1999, pp. 49-55
Si incorporation and Burstein-Moss shift in n-type GaAs
Authors: Hudait, MK Modak, P Krupanidhi, SB
Citation: Mk. Hudait et al., Si incorporation and Burstein-Moss shift in n-type GaAs, MAT SCI E B, 60(1), 1999, pp. 1-11
Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes
Authors: Hudait, MK Krupanidhi, SB
Citation: Mk. Hudait et Sb. Krupanidhi, Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes, SOL ST ELEC, 43(12), 1999, pp. 2135-2139
Low temperature photoluminescence properties of Zn-doped GaAs
Authors: Hudait, MK Modak, P Rao, KSRK Krupanidhi, SB
Citation: Mk. Hudait et al., Low temperature photoluminescence properties of Zn-doped GaAs, MAT SCI E B, 57(1), 1998, pp. 62-70
Risultati: 1-11 |