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Results:
1-9
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Results: 9
Authors:
Hugon, MC
Varniere, F
Letendu, F
Agius, B
Vickridge, L
Kingon, AI
Citation: Mc. Hugon et al., O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier, J MATER RES, 16(9), 2001, pp. 2591-2599
Authors:
Letendu, F
Hugon, MC
Desvignes, JM
Agius, B
Vickridge, I
Kim, DJ
Kingon, AI
Citation: F. Letendu et al., Oxidation resistance of TaSiN diffusion barriers, INTEGR FERR, 31(1-4), 2000, pp. 315-322
Authors:
Hugon, MC
Desvignes, JM
Agius, B
Vickridge, IC
Kim, DJ
Kingon, AI
Citation: Mc. Hugon et al., Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films, NUCL INST B, 161, 2000, pp. 578-583
Authors:
Delmotte, F
Hugon, MC
Agius, B
Irene, EA
Citation: F. Delmotte et al., High density plasmas for micro- and optoelectronics processing, VIDE, 54(291), 1999, pp. 11
Authors:
Hugon, MC
Delmotte, F
Agius, B
Citation: Mc. Hugon et al., Comparison of SiO2 and SiNx : H thin film properties deposited by high density plasma, VIDE, 54(291), 1999, pp. 73
Authors:
Naudin, F
Tristant, P
Hugon, MC
Jauberteau, I
Agius, B
Desmaison, J
Citation: F. Naudin et al., RMPECVD of silica films in large scale microwave plasma reactor: Films properties, J PHYS IV, 9(P8), 1999, pp. 819-826
Authors:
Hugon, MC
Delmotte, F
Agius, B
Irene, EA
Citation: Mc. Hugon et al., High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties, J VAC SCI B, 17(4), 1999, pp. 1430-1434
Authors:
Aubert, P
von Bardeleben, HJ
Delmotte, F
Cantin, JL
Hugon, MC
Citation: P. Aubert et al., Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface, PHYS REV B, 59(16), 1999, pp. 10677-10684
Authors:
Rabibisoa, U
Aubert, P
Bridou, F
Hugon, MC
Agius, B
Citation: U. Rabibisoa et al., Epitaxial growth of (Pb, La)TiO3 thin films on (0001) Al2O3 and (001)SrTiO3 substrates by RF magnetron sputtering, FERROELECTR, 225(1-4), 1999, pp. 1109-1116
Risultati:
1-9
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