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Results: 1-11 |
Results: 11
Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy
Authors: Lin, CH Hwu, RJ Sadwick, LP
Citation: Ch. Lin et al., Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy, J MATER RES, 16(11), 2001, pp. 3266-3273
Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures
Authors: Lin, CH Hwu, RJ Sadwick, LP Heo, D
Citation: Ch. Lin et al., Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures, IEEE DEVICE, 48(10), 2001, pp. 2205-2209
Transistor action in GaP/TmP/GaAs heterostructure
Authors: Lin, CH Hwu, RJ Sadwick, LP
Citation: Ch. Lin et al., Transistor action in GaP/TmP/GaAs heterostructure, ELECTR LETT, 37(18), 2001, pp. 1142-1143
Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)
Authors: Yang, GW Hwu, RJ Xu, ZT Ma, XY
Citation: Gw. Yang et al., Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m), IEEE S T QU, 6(4), 2000, pp. 577-584
An efficient surface impedance boundary condition for the FDTD modeling ofsurface-emitting lasers with Bragg stacks
Authors: Ren, JS Hwu, RJ
Citation: Js. Ren et Rj. Hwu, An efficient surface impedance boundary condition for the FDTD modeling ofsurface-emitting lasers with Bragg stacks, ELECTROMAGN, 20(1), 2000, pp. 29-41
Magnetization-controlled spin transport in DyAs/GaAs layers
Authors: Mao, JM Zudov, ME Du, RR Lee, PP Sadwick, LP Hwu, RJ
Citation: Jm. Mao et al., Magnetization-controlled spin transport in DyAs/GaAs layers, J APPL PHYS, 87(9), 2000, pp. 5170-5172
Magnetic properties of DyAs and DyP (001) films
Authors: Rush, E Wu, L Tsui, F Lee, PP Sadwick, LP Hwu, RJ
Citation: E. Rush et al., Magnetic properties of DyAs and DyP (001) films, J APPL PHYS, 85(8), 1999, pp. 4970-4972
Theoretical analysis and FDTD simulation of GaAs nonlinear transmission lines
Authors: Wang, XD Hwu, RJ
Citation: Xd. Wang et Rj. Hwu, Theoretical analysis and FDTD simulation of GaAs nonlinear transmission lines, IEEE MICR T, 47(7), 1999, pp. 1083-1091
A straightforward method for the FDTD analysis of quasi-optical arrays of active devices
Authors: Ren, JS Wang, XD Hwu, RJ
Citation: Js. Ren et al., A straightforward method for the FDTD analysis of quasi-optical arrays of active devices, IEEE MICR T, 47(2), 1999, pp. 189-197
Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique
Authors: Narasimhan, R Sadwick, LP Hwu, RJ
Citation: R. Narasimhan et al., Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique, IEEE DEVICE, 46(1), 1999, pp. 24-31
High-performance 980-nm quantum-well lasers using a hybrid material systemof an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
Authors: Yang, GW Hwu, RJ Xu, ZT Ma, XY
Citation: Gw. Yang et al., High-performance 980-nm quantum-well lasers using a hybrid material systemof an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition, IEEE J Q EL, 35(10), 1999, pp. 1535-1541
Risultati: 1-11 |