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Results: 1-9 |
Results: 9
CHARACTERIZATION OF HIGH-PERFORMANCE INTEGRATED OPTICALLY ADDRESSED SPATIAL LIGHT MODULATORS
Authors: BOWMAN SR RABINOVICH WS BEADIE G KIRKPATRICK SM KATZER DS IKOSSIANASTASIOU K ADLER CL
Citation: Sr. Bowman et al., CHARACTERIZATION OF HIGH-PERFORMANCE INTEGRATED OPTICALLY ADDRESSED SPATIAL LIGHT MODULATORS, Journal of the Optical Society of America. B, Optical physics, 15(2), 1998, pp. 640-647
CHARACTERIZATION OF LT GAAS CARRIER LIFETIME IN MULTILAYER GAAS EPITAXIAL WAFERS BY THE TRANSIENT REFLECTIVITY TECHNIQUE
Authors: MCMORROW D MELINGER JS KNUDSON AR BUCHNER S IKOSSIANASTASIOU K MOSS SC ENGELHARDT D CHILDS T CAMPBELL AB
Citation: D. Mcmorrow et al., CHARACTERIZATION OF LT GAAS CARRIER LIFETIME IN MULTILAYER GAAS EPITAXIAL WAFERS BY THE TRANSIENT REFLECTIVITY TECHNIQUE, IEEE transactions on nuclear science, 44(6), 1997, pp. 2290-2297
GRAY-SCALE RESPONSE OF MULTIPLE-QUANTUM-WELL SPATIAL LIGHT MODULATORS
Authors: RABINOVICH WS BOWMAN SR MAHON R WALSH A BEADIE G ADLER CL KATZER DS IKOSSIANASTASIOU K
Citation: Ws. Rabinovich et al., GRAY-SCALE RESPONSE OF MULTIPLE-QUANTUM-WELL SPATIAL LIGHT MODULATORS, Journal of the Optical Society of America. B, Optical physics, 13(10), 1996, pp. 2235-2241
EARLY VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS - QUANTUM TUNNELING AND BASE RECOMBINATION EFFECTS
Authors: KROWNE CM IKOSSIANASTASIOU K KOUGIANOS E
Citation: Cm. Krowne et al., EARLY VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS - QUANTUM TUNNELING AND BASE RECOMBINATION EFFECTS, Solid-state electronics, 38(12), 1995, pp. 1979-1991
WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES
Authors: IKOSSIANASTASIOU K BINARI SC KELNER G BOOS JB KYONO CS MITTEREDER J GRIFFIN GL
Citation: K. Ikossianastasiou et al., WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES, Journal of the Electrochemical Society, 142(10), 1995, pp. 3558-3564
GAIN ENHANCEMENT IN ALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER LEDGE
Authors: KYONO CS BINARI SC IKOSSIANASTASIOU K
Citation: Cs. Kyono et al., GAIN ENHANCEMENT IN ALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER LEDGE, Journal of applied physics, 76(3), 1994, pp. 1954-1955
HIGH-RESOLUTION SPATIAL LIGHT MODULATORS USING GAAS ALGAAS MULTIPLE-QUANTUM WELLS/
Authors: BOWMAN SR RABINOVICH WS KYONO CS KATZER DS IKOSSIANASTASIOU K
Citation: Sr. Bowman et al., HIGH-RESOLUTION SPATIAL LIGHT MODULATORS USING GAAS ALGAAS MULTIPLE-QUANTUM WELLS/, Applied physics letters, 65(8), 1994, pp. 956-958
GAAS ALGAAS MULTIQUANTUM-WELL RESONANT PHOTOREFRACTIVE DEVICES FABRICATED USING EPITAXIAL LIFT-OFF/
Authors: KYONO CS IKOSSIANASTASIOU K RABINOVICH WS BOWMAN SR KATZER DS TSAO AJ
Citation: Cs. Kyono et al., GAAS ALGAAS MULTIQUANTUM-WELL RESONANT PHOTOREFRACTIVE DEVICES FABRICATED USING EPITAXIAL LIFT-OFF/, Applied physics letters, 64(17), 1994, pp. 2244-2246
GAASSB FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: IKOSSIANASTASIOU K
Citation: K. Ikossianastasiou, GAASSB FOR HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 878-884
Risultati: 1-9 |