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Authors: BERISHEV IE GORBACHEV AY MISHOURNYI VA ILYINSKAYA ND STANKEVICH AL TARASOV IS
Citation: Ie. Berishev et al., MODULATION BANDWIDTH OF HIGH-POWER SINGLE-QUANTUM-WELL BURIED HETEROSTRUCTURE INGAASP INP (LAMBDA=1.3 MU-M) AND INGAASP/GAAS (LAMBDA=0.8 MU-M) LASER-DIODES/, Applied physics letters, 68(9), 1996, pp. 1186-1188

Authors: BERISHEV IE DEANDA F MISHOURNYI VA OLVERA J ILYINSKAYA ND VASILYEV VI
Citation: Ie. Berishev et al., H2O2-HF-C4O6H6 (TARTARIC ACID)H2O ETCHING SYSTEM FOR CHEMICAL POLISHING OF GASB, Journal of the Electrochemical Society, 142(10), 1995, pp. 189-191
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