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Results: 1-6 |
Results: 6

Authors: INGRAM SG CLIFTON JC
Citation: Sg. Ingram et Jc. Clifton, THE USE OF ACTIVE TRAVELING-WAVE STRUCTURES IN GAAS MMICS, IEEE transactions on microwave theory and techniques, 44(6), 1996, pp. 956-960

Authors: INGRAM SG LINFIELD EH BROWN KM JONES GAC RICHIE DA KELLY MJ
Citation: Sg. Ingram et al., PERFORMANCE OF DOUBLE-HETEROSTRUCTURE UNIPOLAR TRANSISTORS IN HIGH-FREQUENCY POWER APPLICATIONS, Solid-state electronics, 38(9), 1995, pp. 1663-1665

Authors: INGRAM SG LINFIELD EH BROWN KM JONES GAC RITCHIE DA KELLY MJ
Citation: Sg. Ingram et al., 2DEG BASE HOT-ELECTRON TRANSISTORS FABRICATED USING MBE AND IN-SITU ION-BEAM LITHOGRAPHY, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1065-1069

Authors: LAW VJ BRAITHWAITE NS INGRAM SG CLARY DC JONES GAC
Citation: Vj. Law et al., INVESTIGATION OF MODULATED RADIO-FREQUENCY PLASMA-ETCHING OF GAAS USING LANGMUIR PROBES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3337-3341

Authors: LAW VJ INGRAM SG JONES GAC
Citation: Vj. Law et al., ECR MAGNETIC-MIRROR COUPLED PLASMA-ETCHING OF GAAS USING CH4-H2-AR, Semiconductor science and technology, 6(9), 1991, pp. 945-947

Authors: LAW VJ INGRAM SG TEWORDT M JONES GAC
Citation: Vj. Law et al., REACTIVE ION ETCHING OF GAAS USING CH4 - IN HE, NE AND AR, Semiconductor science and technology, 6(5), 1991, pp. 411-413
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