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ISOMAE S
MINOWA K
SATOH T
SUZUKI T
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Authors:
SHIMIZU H
SUGINO Y
SUZUKI T
KIYOTA S
NAGASAWA K
FUJITA M
TAKEDA K
ISOMAE S
Citation: H. Shimizu et al., EXCELLENCE OF GATE OXIDE INTEGRITY IN METAL-OXIDE-SEMICONDUCTOR LARGE-SCALE-INTEGRATED CIRCUITS BASED ON P- P- THIN-FILM EPITAXIAL SILICON-WAFERS/, JPN J A P 1, 36(5A), 1997, pp. 2565-2570
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