Authors: ISOMAE S OHKURA M MAKI M MATSUDA Y

Citation: S. Isomae et al., X-RAY CRYSTAL TRUNCATION ROD SCATTERING ANALYSIS OF REACTIVE ION ETCHED SILICON, Journal of applied physics, 84(10), 1998, pp. 5482-5486

Authors: SHIMIZU H ISOMAE S MINOWA K SATOH T SUZUKI T

Citation: H. Shimizu et al., GRAVITATIONAL STRESS-INDUCED DISLOCATIONS IN LARGE-DIAMETER SILICON-WAFERS STUDIED BY X-RAY TOPOGRAPHY AND COMPUTER-SIMULATION, Journal of the Electrochemical Society, 145(7), 1998, pp. 2523-2529

Authors: SHIMIZU H SUGINO Y SUZUKI T KIYOTA S NAGASAWA K FUJITA M TAKEDA K ISOMAE S

Citation: H. Shimizu et al., EXCELLENCE OF GATE OXIDE INTEGRITY IN METAL-OXIDE-SEMICONDUCTOR LARGE-SCALE-INTEGRATED CIRCUITS BASED ON P- P- THIN-FILM EPITAXIAL SILICON-WAFERS/, JPN J A P 1, 36(5A), 1997, pp. 2565-2570

Authors: ISOMAE S TAMAKI Y

Citation: S. Isomae et Y. Tamaki, CAVITY FORMATION DUE TO SI3N4 SIO2 FILM-INDUCED STRESS IN SILICON/, Journal of the Electrochemical Society, 144(1), 1997, pp. 340-345

Authors: KOUKETSU M ISOMAE S

Citation: M. Kouketsu et S. Isomae, HYDROGEN PASSIVATION OF IRON-RELATED HOLE TRAPS IN SILICON, Journal of applied physics, 80(3), 1996, pp. 1485-1487

Authors: ISOMAE S ISHIBA T ANDO T TAMURA M

Citation: S. Isomae et al., ANNEALING BEHAVIOR OF MEV IMPLANTED CARBON IN SILICON, Journal of applied physics, 74(6), 1993, pp. 3815-3820