Authors: IWAMURO N BALIGA BJ

Citation: N. Iwamuro et Bj. Baliga, REVERSE-BIASED SAFE OPERATING AREA OF EMITTER SWITCHED THYRISTORS, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 352-357

Authors: IWAMURO N SEKI Y

Citation: N. Iwamuro et Y. Seki, NUMERICAL-SIMULATION OF STATIC AND DYNAMIC CHARACTERISTICS OF DUAL-GATE METAL-OXIDE-SEMICONDUCTOR THYRISTOR, JPN J A P 2, 34(3A), 1995, pp. 285-287

Authors: IWAMURO N HARADA Y YAMAZAKI T KUMAGAI N SEKI Y

Citation: N. Iwamuro et al., A NEW VERTICAL IGBT STRUCTURE WITH A MONOLITHIC OVER-CURRENT, OVER-VOLTAGE, AND OVER-TEMPERATURE SENSING AND PROTECTING CIRCUIT, IEEE electron device letters, 16(9), 1995, pp. 399-401

Authors: IWAMURO N SHEKAR MS BALIGA BJ

Citation: N. Iwamuro et al., FORWARD-BIASED SAFE OPERATING AREA OF EMITTER SWITCHED THYRISTORS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 334-339

Authors: IWAMURO N TAGAMI S

Citation: N. Iwamuro et S. Tagami, 2-DIMENSIONAL POWER DEVICE SIMULATOR CONSIDERING AN INTEGRAL EXTERNALCIRCUIT EQUATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 909-912