Authors: Busatto, G Iannuzzo, F Velardi, F Wyss, J

Citation: G. Busatto et al., Non-destructive tester for single event burnout of power diodes, MICROEL REL, 41(9-10), 2001, pp. 1725-1729

Authors: Iannuzzo, F Persiano, GV Busatto, G

Citation: F. Iannuzzo et al., Measurement of the BJT activation current during the reverse recovery of power MOSFET's drain-source diode, IEEE DEVICE, 48(2), 2001, pp. 391-393

Authors: Iannuzzo, F Busatto, G

Citation: F. Iannuzzo et G. Busatto, A lumped-charge model for gate turn-off thyristors suitable for circuit simulation, MICROELEC J, 30(6), 1999, pp. 543-550

Authors: Busatto, G Persiano, GV Iannuzzo, F

Citation: G. Busatto et al., Experimental and numerical investigation on MOSFET's failure during reverse recovery of its internal diode, IEEE DEVICE, 46(6), 1999, pp. 1268-1273