Authors: Garikipati, K Rao, VS Hao, MY Ibok, E de Wolf, I Dutton, RW

Citation: K. Garikipati et al., Modelling and validation of contributions to stress in the Shallow Trench Isolation process sequence, CMES-COMP M, 1(1), 2000, pp. 65-83

Authors: Ahmed, K Ibok, E Bains, G Chi, D Ogle, B Wortman, JJ Hauser, JR

Citation: K. Ahmed et al., Comparative physical and electrical metrology of ultrathin oxides in the 6to 1.5 nm regime, IEEE DEVICE, 47(7), 2000, pp. 1349-1354

Authors: Ahmed, K Ibok, E Hauser, J

Citation: K. Ahmed et al., Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides, ELECTR LETT, 36(20), 2000, pp. 1699-1700

Authors: Ibok, E Ahmed, K Hao, MY Ogle, B Wortman, JJ Hauser, JR

Citation: E. Ibok et al., Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics, IEEE ELEC D, 20(9), 1999, pp. 442-444

Authors: Ahmed, K Ibok, E Yeap, GCF Xiang, Q Ogle, B Wortman, JJ Hauser, JR

Citation: K. Ahmed et al., Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's, IEEE DEVICE, 46(8), 1999, pp. 1650-1655