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Results:
1-8
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Results: 8
Authors:
Egorov, AY
Bernklau, D
Borchert, B
Illek, S
Livshits, D
Rucki, A
Schuster, M
Kaschner, A
Hoffmann, A
Dumitras, G
Amann, MC
Riechert, H
Citation: Ay. Egorov et al., Growth of high quality InGaAsN heterostructures and their laser application, J CRYST GR, 227, 2001, pp. 545-552
Authors:
Fehse, R
Sweeney, SJ
Adams, AR
O'Reilly, EP
Egorov, AY
Riechert, H
Illek, S
Citation: R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93
Authors:
Borchert, B
Egorov, AY
Illek, S
Riechert, H
Citation: B. Borchert et al., Static and dynamic characteristics of 1.29-mu m GaInNAs ridge-waveguide laser diodes, IEEE PHOTON, 12(6), 2000, pp. 597-599
Authors:
Riechert, H
Egorov, AY
Livshits, D
Borchert, B
Illek, S
Citation: H. Riechert et al., InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices, NANOTECHNOL, 11(4), 2000, pp. 201-205
Authors:
Illek, S
Ultsch, A
Borchert, B
Egorov, AY
Riechert, H
Citation: S. Illek et al., Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 mu m, ELECTR LETT, 36(8), 2000, pp. 725-726
Authors:
Schmidt, B
Illek, S
Gessner, R
Amann, MC
Citation: B. Schmidt et al., Design and realization of a buried-heterostructure tunable-twin-guide laser diode with electrical blocking regions, IEEE J Q EL, 35(5), 1999, pp. 794-802
Authors:
Borchert, B
Egorov, AY
Illek, S
Komainda, M
Riechert, H
Citation: B. Borchert et al., 1.29 mu m GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance, ELECTR LETT, 35(25), 1999, pp. 2204-2206
Authors:
Steffens, WM
Noding, M
Illek, S
Borchert, J
Amann, MC
Citation: Wm. Steffens et al., Tuning dependent beam characteristics of continuously tunable laser diodes, ELECTR LETT, 35(13), 1999, pp. 1102-1103
Risultati:
1-8
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