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Results: 1-14 |
Results: 14
Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures
Authors: Sadowski, J Mathieu, R Svedlindh, P Karlsteen, M Kanski, J Ilver, L Asklund, H Swiatek, K Domagala, JZ Bak-Misiuk, J Maude, D
Citation: J. Sadowski et al., Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures, PHYSICA E, 10(1-3), 2001, pp. 181-185
Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314
Authors: Asklund, H Ilver, L Kanski, J Mankefors, S Sodervall, U Sadowski, J
Citation: H. Asklund et al., Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314, PHYS REV B, 6319(19), 2001, pp. 5314
The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)
Authors: Zsebok, O Thordson, JV Gunnarsson, JR Zhao, QX Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001), J APPL PHYS, 89(7), 2001, pp. 3662-3667
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates
Authors: Sadowski, J Mathieu, R Svedlindh, P Domagala, JZ Bak-Misiuk, J Swiatek, K Karlsteen, M Kanski, J Ilver, L Asklund, H Sodervall, U
Citation: J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273
Interaction between As and InP(110) studied by photoemission
Authors: Oscarsson, H He, ZQ Ilver, L Kanski, J Mankefors, S Nilsson, PO Karlsson, UO
Citation: H. Oscarsson et al., Interaction between As and InP(110) studied by photoemission, PHYS REV B, 61(3), 2000, pp. 2065-2072
The effect of Al in plasma-assisted MBE-grown GaN
Authors: Zsebok, O Thordson, JV Zhao, QX Sodervall, U Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of Al in plasma-assisted MBE-grown GaN, MRS I J N S, 5, 2000, pp. NIL_185-NIL_190
Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
Authors: Sadowski, J Domagala, JZ Bak-Misiuk, J Kolesnik, S Sawicki, M Swiatek, K Kanski, J Ilver, L Strom, V
Citation: J. Sadowski et al., Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers, J VAC SCI B, 18(3), 2000, pp. 1697-1700
Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substrates
Authors: Sadowski, J Kanski, J Ilver, L Johansson, J
Citation: J. Sadowski et al., Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substrates, APPL SURF S, 166(1-4), 2000, pp. 247-252
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs
Authors: Zsebok, O Thordson, JV Ilver, L Sodervall, U Andersson, TG
Citation: O. Zsebok et al., Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs, APPL SURF S, 166(1-4), 2000, pp. 259-262
Nanocrystals at MBE-grown GaN/GaAs(001) interfaces
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Nanocrystals at MBE-grown GaN/GaAs(001) interfaces, APPL SURF S, 166(1-4), 2000, pp. 317-321
Structural properties of MBE grown GaMnAs layers
Authors: Sadowski, J Domagala, JZ Bak-Misiuk, J Kolesnik, S Swiatek, K Kanski, J Ilver, L
Citation: J. Sadowski et al., Structural properties of MBE grown GaMnAs layers, THIN SOL FI, 367(1-2), 2000, pp. 165-167
Photoemission and low-energy electron diffraction studies of 3,4,9,10-perylene tetracarboxylic dianhydride layers on Si(111): H
Authors: Tengelin-Nilsson, M Ilver, L Kanski, J
Citation: M. Tengelin-nilsson et al., Photoemission and low-energy electron diffraction studies of 3,4,9,10-perylene tetracarboxylic dianhydride layers on Si(111): H, SURF SCI, 464(2-3), 2000, pp. 265-271
Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys, NANOSTR MAT, 12(1-4), 1999, pp. 425-428
Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis
Authors: Strocov, VN Mankefors, S Nilsson, PO Kanski, J Ilver, L Starnberg, HI
Citation: Vn. Strocov et al., Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis, PHYS REV B, 59(8), 1999, pp. R5296-R5299
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