Authors: Inokawa, H Fujiwara, A Takahashi, Y

Citation: H. Inokawa et al., Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors, APPL PHYS L, 79(22), 2001, pp. 3618-3620

Authors: Imamura, Y Inokawa, H Ito, A Kadotani, H Toyama, K Noda, M Nakanishi, S Hirano, T

Citation: Y. Imamura et al., Roles of GABAergic inhibition and NMDA receptor subunits in the spatio-temporal integration in the cerebellar cortex of mice, NEUROSCI RE, 38(3), 2000, pp. 289-301

Authors: Shibata, N Inokawa, H Tokunaga, K Ohta, S

Citation: N. Shibata et al., Megabit-class size-configurable 250-MHz SRAM macrocells with a squashed-memory-cell architecture, IEICE TR EL, E82C(1), 1999, pp. 94-104

Authors: Higashi, S Crair, MC Kurotani, T Inokawa, H Toyama, K

Citation: S. Higashi et al., Altered spatial patterns of functional thalamocortical connections in the barrel cortex after neonatal infraorbital nerve cut revealed by optical recording, NEUROSCIENC, 91(2), 1999, pp. 439-452