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Results:
1-7
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Results: 7
Authors:
Sato, T
Iwaya, M
Isomura, K
Ukai, T
Kamiyama, S
Amano, H
Akasaki, I
Citation: T. Sato et al., Theoretical analysis of optical transverse-mode control on GaN-based laserdiodes, IEICE TR EL, E83C(4), 2000, pp. 573-578
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, YW
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, YS
Yamada, N
Citation: T. Takeuchi et al., Nitride-based laser diodes using thick n-AlGaN layers, J ELEC MAT, 29(3), 2000, pp. 302-305
Authors:
Era, M
Tsutsui, T
Takehara, K
Isomura, K
Taniguchi, H
Citation: M. Era et al., Electroluminescent device with biphenylpyrazine derivative Eu salt LB (Langmuir-Blodgett) film as a molecular-size emissive layer, THIN SOL FI, 363(1-2), 2000, pp. 229-231
Authors:
Ambe, C
Takeuchi, T
Katoh, H
Isomura, K
Satoh, T
Mizumoto, R
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, Y
Yamada, N
Citation: C. Ambe et al., GaN-based laser diode with focused ion beam-etched mirrors, MAT SCI E B, 59(1-3), 1999, pp. 382-385
Authors:
Takeuchi, T
Detchprohm, T
Yano, M
Yamaguchi, M
Hayashi, N
Iwaya, M
Isomura, K
Kimura, K
Amano, H
Akasaki, I
Kaneko, Y
Watanabe, S
Yamaoka, Y
Shioda, R
Hidaka, T
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer, PHYS ST S-A, 176(1), 1999, pp. 31-34
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Amano, H
Akasaki, I
Kaneko, Y
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Improvement of far-field pattern in nitride laser diodes, APPL PHYS L, 75(19), 1999, pp. 2960-2962
Authors:
Umemura, A
Suzuka, T
Isomura, K
Ito, M
Mukodaka, H
Citation: A. Umemura et al., Simultaneous transcranial and endoscopic transnasal approach for recurrenthuge pituitary adenoma, ACT NEUROCH, 141(12), 1999, pp. 1359-1360
Risultati:
1-7
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