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Results: 1-11 |
Results: 11
Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process
Authors: Andreev, SK Popova, LI Gueorguiev, VK Ivanov, TE Beshkov, G
Citation: Sk. Andreev et al., Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process, MAT SCI E B, 83(1-3), 2001, pp. 223-226
Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides
Authors: Gueorguiev, VK Ivanov, TE Dimitriadis, CA Andreev, SK Popova, LI
Citation: Vk. Gueorguiev et al., Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides, MICROELEC J, 32(4), 2001, pp. 301-304
Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides
Authors: Gueorguiev, VK Ivanov, TE Dimitriadis, CA Andreev, SK Popova, LI
Citation: Vk. Gueorguiev et al., Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides, MICROELEC J, 31(8), 2000, pp. 663-666
Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon
Authors: Gueorguiev, VK Ivanov, TE Dimitriadis, CA Popova, LI Andreev, SK
Citation: Vk. Gueorguiev et al., Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon, MICROELEC J, 31(3), 2000, pp. 207-211
Voltage vs time dependent current response of MOSFET humidity gas sensor
Authors: Popova, LI Andreev, SK Gueorgiev, VK Ivanov, TE
Citation: Li. Popova et al., Voltage vs time dependent current response of MOSFET humidity gas sensor, MICROELEC J, 31(2), 2000, pp. 135-138
Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors
Authors: Angelis, CT Dimitriadis, CA Farmakis, FV Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Ct. Angelis et al., Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors, APPL PHYS L, 76(1), 2000, pp. 118-120
Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)
Authors: Farmakis, FV Dimitriadis, CA Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Fv. Farmakis et al., Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs), SOL ST ELEC, 43(7), 1999, pp. 1259-1266
Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)
Authors: Farmakis, FV Brini, J Kamarinos, G Dimitriadis, CA Gueorguiev, VK Ivanov, TE
Citation: Fv. Farmakis et al., Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs), MICROEL REL, 39(6-7), 1999, pp. 885-889
Photon emission and related hot-carrier effects in polycrystalline siliconthin-film transistors
Authors: Farmakis, FV Dimitriadis, CA Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Fv. Farmakis et al., Photon emission and related hot-carrier effects in polycrystalline siliconthin-film transistors, J APPL PHYS, 85(9), 1999, pp. 6917-6919
Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors
Authors: Angelis, CT Dimitriadis, CA Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Ct. Angelis et al., Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors, IEEE DEVICE, 46(5), 1999, pp. 968-974
Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors
Authors: Farmakis, FV Dimitriadis, CA Brini, J Kamarinos, G Gueorguiev, VK Ivanov, TE
Citation: Fv. Farmakis et al., Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors, ELECTR LETT, 34(24), 1998, pp. 2356-2357
Risultati: 1-11 |