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Results: 1-11 |
Results: 11
SHIFTS AND SPLITTING OF ENERGY-BANDS IN ELASTICALLY STRAINED INGAP GAAS(111)B EPITAXIAL-FILMS/
Authors: ALPEROVICH VL BOLKHOVITYANOV YB JAROSHEVICH AS KATKOV AV REVENKO MA SCHEIBLER HE TEREKHOV AS
Citation: Vl. Alperovich et al., SHIFTS AND SPLITTING OF ENERGY-BANDS IN ELASTICALLY STRAINED INGAP GAAS(111)B EPITAXIAL-FILMS/, Journal of applied physics, 82(3), 1997, pp. 1214-1219
FOURIER-TRANSFORM ANALYSIS OF ELECTROMODULATION SPECTRA - EFFECTS OF THE MODULATION AMPLITUDE
Authors: ALPEROVICH VL JAROSHEVICH AS SCHEIBLER HE TEREKHOV AS TOBER RL
Citation: Vl. Alperovich et al., FOURIER-TRANSFORM ANALYSIS OF ELECTROMODULATION SPECTRA - EFFECTS OF THE MODULATION AMPLITUDE, Applied physics letters, 71(19), 1997, pp. 2788-2790
SHEAR DEFORMATION POTENTIAL OF ELASTICALLY STRAINED INGAP GAAS(111)B AND INGAASP/GAAS(111)B FILMS/
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS REVENKO MA SCHEIBLER HE TEREKHOV AS
Citation: Yb. Bolkhovityanov et al., SHEAR DEFORMATION POTENTIAL OF ELASTICALLY STRAINED INGAP GAAS(111)B AND INGAASP/GAAS(111)B FILMS/, Semiconductor science and technology, 11(12), 1996, pp. 1847-1849
EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES
Authors: DRESCHER P PLUTZER S REICHERT E SCHEMIES M ALPEROVICH VL BOLKHOVITYANOV YB JAROSHEVICH AS PAULISH AG SCHEIBLER HE TEREKHOV AS
Citation: P. Drescher et al., EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 169-173
LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223
HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES, Journal of applied physics, 79(10), 1996, pp. 7636-7639
FOURIER RESOLUTION OF SURFACE AND INTERFACE CONTRIBUTIONS TO PHOTOREFLECTANCE SPECTRA OF MULTILAYERED STRUCTURES
Authors: SCHEIBLER HE ALPEROVICH VL JAROSHEVICH AS TEREKHOV AS
Citation: He. Scheibler et al., FOURIER RESOLUTION OF SURFACE AND INTERFACE CONTRIBUTIONS TO PHOTOREFLECTANCE SPECTRA OF MULTILAYERED STRUCTURES, Physica status solidi. a, Applied research, 152(1), 1995, pp. 113-122
LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES
Authors: BOLKHOVITYANOV YB GILINSKY AM NOMEROTSKY NV TRUKHANOV EM JAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES, Journal of crystal growth, 149(1-2), 1995, pp. 17-22
LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES
Authors: BOLKHOVITYANOV YB ALPEROVICH VL JAROSHEVICH AS NOMEROTSKY NV PAULISH AG TEREKHOV AS TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313
INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/
Authors: BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2486-2487
DETERMINATION OF BUILT-IN ELECTRIC-FIELDS IN DELTA-DOPED GAAS STRUCTURES BY PHASE-SENSITIVE PHOTOREFLECTANCE
Authors: ALPEROVICH VL JAROSHEVICH AS SCHEIBLER HE TGEREKHOV AS
Citation: Vl. Alperovich et al., DETERMINATION OF BUILT-IN ELECTRIC-FIELDS IN DELTA-DOPED GAAS STRUCTURES BY PHASE-SENSITIVE PHOTOREFLECTANCE, Solid-state electronics, 37(4-6), 1994, pp. 657-660
Risultati: 1-11 |