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Results: 1-17 |
Results: 17
GROWTH OF HIGHLY (0001)-ORIENTED ALUMINUM NITRIDE THIN-FILMS WITH SMOOTH SURFACES ON SILICON-CARBIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: JARRENDAHL K SMITH SA ZHELEVA T KERN RS DAVIS RF
Citation: K. Jarrendahl et al., GROWTH OF HIGHLY (0001)-ORIENTED ALUMINUM NITRIDE THIN-FILMS WITH SMOOTH SURFACES ON SILICON-CARBIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Vacuum, 49(3), 1998, pp. 189-191
MULTIPLE SAMPLE ANALYSIS OF SPECTROSCOPIC ELLIPSOMETRY DATA OF SEMITRANSPARENT FILMS
Authors: JARRENDAHL K ARWIN H
Citation: K. Jarrendahl et H. Arwin, MULTIPLE SAMPLE ANALYSIS OF SPECTROSCOPIC ELLIPSOMETRY DATA OF SEMITRANSPARENT FILMS, Thin solid films, 313, 1998, pp. 114-118
GROWTH AND DOPING VIA GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SIC AND SIC ALN HETEROSTRUCTURES AND THEIR MICROSTRUCTURAL AND ELECTRICAL CHARACTERIZATION/
Authors: KERN RS JARRENDAHL K TANAKA S DAVIS RF
Citation: Rs. Kern et al., GROWTH AND DOPING VIA GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SIC AND SIC ALN HETEROSTRUCTURES AND THEIR MICROSTRUCTURAL AND ELECTRICAL CHARACTERIZATION/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1282-1288
ANNEALING-INDUCED INTERDIFFUSION AND CRYSTALLIZATION IN SPUTTERED AMORPHOUS SI GE MULTILAYERS/
Authors: CZIGANY Z RADNOCZI G JARRENDAHL K SUNDGREN JE
Citation: Z. Czigany et al., ANNEALING-INDUCED INTERDIFFUSION AND CRYSTALLIZATION IN SPUTTERED AMORPHOUS SI GE MULTILAYERS/, Journal of materials research, 12(9), 1997, pp. 2255-2261
MICROSTRUCTURE EVOLUTION IN AMORPHOUS GE SI MULTILAYERS GROWN BY MAGNETRON SPUTTER-DEPOSITION/
Authors: JARRENDAHL K IVANOV I SUNDGREN JE RADNOCZI G CZIGANY Z GREENE JE
Citation: K. Jarrendahl et al., MICROSTRUCTURE EVOLUTION IN AMORPHOUS GE SI MULTILAYERS GROWN BY MAGNETRON SPUTTER-DEPOSITION/, Journal of materials research, 12(7), 1997, pp. 1806-1815
HOMOEPITAXIAL SIC GROWTH BY MOLECULAR-BEAM EPITAXY
Authors: KERN RS JARRENDAHL K TANAKA S DAVIS RF
Citation: Rs. Kern et al., HOMOEPITAXIAL SIC GROWTH BY MOLECULAR-BEAM EPITAXY, Physica status solidi. b, Basic research, 202(1), 1997, pp. 379-404
COMPOSITIONAL INFORMATION FROM AMORPHOUS SI-CE MULTILAYERS USING HIGH-RESOLUTION ELECTRON-MICROSCOPY IMAGING AND DIRECT DIGITAL RECORDING
Authors: HENNING P WALLENBERG LR JARRENDAHL K HULTMAN L FALK LKL SUNDGREN JE
Citation: P. Henning et al., COMPOSITIONAL INFORMATION FROM AMORPHOUS SI-CE MULTILAYERS USING HIGH-RESOLUTION ELECTRON-MICROSCOPY IMAGING AND DIRECT DIGITAL RECORDING, Ultramicroscopy, 66(3-4), 1996, pp. 221-235
STUDY OF ION MIXING DURING AUGER DEPTH PROFILING OF GE-SI MULTILAYER SYSTEM .2. LOW ION ENERGY (0.2-2 KEV) RANGE
Authors: MENYHARD M BARNA A BIERSACK JP JARRENDAHL K SUNDGREN JE
Citation: M. Menyhard et al., STUDY OF ION MIXING DURING AUGER DEPTH PROFILING OF GE-SI MULTILAYER SYSTEM .2. LOW ION ENERGY (0.2-2 KEV) RANGE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1999-2004
X-RAY-DIFFRACTION FROM AMORPHOUS GE SI CANTOR SUPERLATTICES/
Authors: JARRENDAHL K DULEA M BIRCH J SUNDGREN JE
Citation: K. Jarrendahl et al., X-RAY-DIFFRACTION FROM AMORPHOUS GE SI CANTOR SUPERLATTICES/, Physical review. B, Condensed matter, 51(12), 1995, pp. 7621-7631
GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION
Authors: IVANOV I HULTMAN L JARRENDAHL K MARTENSSON P SUNDGREN JE HJORVARSSON B GREENE JE
Citation: I. Ivanov et al., GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION, Journal of applied physics, 78(9), 1995, pp. 5721-5726
SPECTROSCOPIC ELLIPSOMETRY STUDY OF CERIUM DIOXIDE THIN-FILMS GROWN ON SAPPHIRE BY RF MAGNETRON SPUTTERING
Authors: GUO S ARWIN H JACOBSEN SN JARRENDAHL K HELMERSSON U
Citation: S. Guo et al., SPECTROSCOPIC ELLIPSOMETRY STUDY OF CERIUM DIOXIDE THIN-FILMS GROWN ON SAPPHIRE BY RF MAGNETRON SPUTTERING, Journal of applied physics, 77(10), 1995, pp. 5369-5376
LOW-ENERGY ION MIXING IN SI-GE MULTILAYER SYSTEM
Authors: MENYHARD M BARNA A SULYOK A JARRENDAHL K SUNDGREN JE BIERSACK JP
Citation: M. Menyhard et al., LOW-ENERGY ION MIXING IN SI-GE MULTILAYER SYSTEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 383-387
AN X-RAY STUDY OF GENERALIZED CANTOR SUPERLATTICES
Authors: JARRENDAHL K BIRCH J DULEA M ARWIN H SUNDGREN JE
Citation: K. Jarrendahl et al., AN X-RAY STUDY OF GENERALIZED CANTOR SUPERLATTICES, Thin solid films, 246(1-2), 1994, pp. 120-125
GROWTH AND ELLIPSOMETRIC STUDIES OF PERIODIC AND CANTOR APERIODIC AMORPHOUS GE SI SUPERLATTICES/
Authors: JARRENDAHL K PECZ B SUNDGREN JE ARWIN H
Citation: K. Jarrendahl et al., GROWTH AND ELLIPSOMETRIC STUDIES OF PERIODIC AND CANTOR APERIODIC AMORPHOUS GE SI SUPERLATTICES/, Thin solid films, 240(1-2), 1994, pp. 7-13
A QUASI 3-DIMENSIONAL OPTICAL MEMORY WITH N-BIT MEMORY CELLS BASED ONTHE ELLIPSOMETRIC PRINCIPLE - CONCEPT AND PROTOTYPE DEVICES
Authors: JANSSON R WIGREN R JARRENDAHL K LUNDSTROM I ARWIN H
Citation: R. Jansson et al., A QUASI 3-DIMENSIONAL OPTICAL MEMORY WITH N-BIT MEMORY CELLS BASED ONTHE ELLIPSOMETRIC PRINCIPLE - CONCEPT AND PROTOTYPE DEVICES, Optics communications, 104(4-6), 1994, pp. 277-279
OPTICAL-PROPERTIES AND CRYSTALLIZATION OF AMORPHOUS SI-SB ALLOY THIN-FILMS
Authors: LI XH CARLSSON JRA JARRENDAHL K GONG SF HENTZELL HTG
Citation: Xh. Li et al., OPTICAL-PROPERTIES AND CRYSTALLIZATION OF AMORPHOUS SI-SB ALLOY THIN-FILMS, Journal of applied physics, 75(1), 1994, pp. 507-513
OPTICAL-CONSTANTS AND DRUDE ANALYSIS OF SPUTTERED ZIRCONIUM NITRIDE FILMS
Authors: VESZELEI M ANDERSSON K RIBBING CG JARRENDAHL K ARWIN H
Citation: M. Veszelei et al., OPTICAL-CONSTANTS AND DRUDE ANALYSIS OF SPUTTERED ZIRCONIUM NITRIDE FILMS, Applied optics, 33(10), 1994, pp. 1993-2001
Risultati: 1-17 |