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Citation: Se. Rosenbaum et al., 155-GHZ AND 213-GHZ ALINAS GAINAS/INP HEMT MMIC OSCILLATORS/, IEEE transactions on microwave theory and techniques, 43(4), 1995, pp. 927-932

Authors: MATLOUBIAN M LIU T JELLOIAN LM THOMPSON MA RHODES RA

Citation: M. Matloubian et al., K-BAND GAINAS INP CHANNEL POWER HEMTS, Electronics Letters, 31(9), 1995, pp. 761-762

Authors: JELLOIAN LM MATLOUBIAN M LIU T LIU M THOMPSON MA

Citation: Lm. Jelloian et al., INP-BASED HEMTS WITH AL0.48IN0.52AS(X) P(1-X) SCHOTTKY LAYERS, IEEE electron device letters, 15(5), 1994, pp. 172-174

Authors: NGUYEN LD BROWN AS THOMPSON MA JELLOIAN LM

Citation: Ld. Nguyen et al., 50 NM INP HIGH-ELECTRON-MOBILITY TRANSISTORS, Microwave journal, 36(6), 1993, pp. 96

Authors: MATLOUBIAN M JELLOIAN LM BROWN AS NGUYEN LD LARSON LE DELANEY MJ THOMPSON MA RHODES RA PENCE JE

Citation: M. Matloubian et al., V-BAND HIGH-EFFICIENCY HIGH-POWER ALINAS GAINAS/INP HEMTS/, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2206-2210

Authors: MATLOUBIAN M JELLOIAN LM LUI M LIU TY LARSON LE NGUYEN LD LE MV

Citation: M. Matloubian et al., IIIA-4 GAINAS INP COMPOSITE CHANNEL HEMTS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2112-2112