Citation: M. Nawaz et Gu. Jensen, THE ROLE OF ACCEPTOR DENSITY IN GAAS ALGAAS BASED QUANTUM-WELL HEMTS/, Solid-state electronics, 41(6), 1997, pp. 851-855
Citation: M. Nawaz et Gu. Jensen, DUAL-GATE MULTIPLE-QUANTUM-WELL (MQW) HETEROJUNCTION FIELD-EFFECT TRANSISTORS (HFETS) FOR ACTIVE PHASE SHIFTERS, Microwave and optical technology letters, 12(6), 1996, pp. 322-327
Citation: M. Nawaz et Gu. Jensen, ANALYTICAL CHARGE CONTROL MODEL FOR GAAS ALGAAS-BASED MULTIPLE-QUANTUM-WELL POWER HEMTS/, Microwave and optical technology letters, 11(1), 1996, pp. 1-8
Authors:
THAYNE IG
JENSEN GU
HOLLAND MC
CHEN YC
LI WG
PAULSEN A
DAVIS JH
BEAUMONT SP
BHATTACHARYA PK
Citation: Ig. Thayne et al., COMPARISON OF 80-200 NM GATE LENGTH AL0.25GAAS GAAS/(GAAS-ALAS), AL0.3GAAS/IN0.15GAAS/GAAS, AND IN0.52ALAS/IN0.65GAAS/INP HEMTS/, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2047-2055