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Results: 1-10 |
Results: 10
DIELECTRIC TESTING FOR INTEGRATED POWER DEVICES
Authors: OUSSALAH S JERISIAN R
Citation: S. Oussalah et R. Jerisian, DIELECTRIC TESTING FOR INTEGRATED POWER DEVICES, Microelectronics and reliability, 37(10-11), 1997, pp. 1763-1766
RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: SAGNES B MORAGUES JM YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: B. Sagnes et al., RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(9), 1996, pp. 5469-5477
EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS
Authors: MORAGUES JM SAGNES B YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: Jm. Moragues et al., EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS, Microelectronic engineering, 28(1-4), 1995, pp. 329-332
INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE
Authors: CIANTAR E BOIVIN P BURLE M NIEL C MORAGUES JM SAGNES B JERISIAN R OUALID J
Citation: E. Ciantar et al., INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE, Journal of non-crystalline solids, 187, 1995, pp. 144-148
INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES
Authors: MORAGUES JM SAGNES B JERISIAN R OUALID J CIANTAR E LIOTARD JL MERENDA P
Citation: Jm. Moragues et al., INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 156-159
SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MORAGUES JM CIANTAR E JERISIAN R SAGNES B OUALID J
Citation: Jm. Moragues et al., SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(9), 1994, pp. 5278-5287
HOT-CARRIER EFFECTS ON LEAKAGE CURRENTS IN MOSFETS - MODELING AND EXPERIMENT
Authors: OUALID J BURGNIARD S CIANTAR E JERISIAN R
Citation: J. Oualid et al., HOT-CARRIER EFFECTS ON LEAKAGE CURRENTS IN MOSFETS - MODELING AND EXPERIMENT, Microelectronics and reliability, 33(11-12), 1993, pp. 1759-1777
EFFECTS OF HIGH-FIELD ELECTRON INJECTION INTO THE GATE OXIDE OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: MORAGUES JM OUALID J JERISIAN R CIANTAR E
Citation: Jm. Moragues et al., EFFECTS OF HIGH-FIELD ELECTRON INJECTION INTO THE GATE OXIDE OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of applied physics, 74(8), 1993, pp. 5078-5085
CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES
Authors: SEGHIR H CRISTOLOVEANU S JERISIAN R OUALID J AUBERTONHERVE AJ
Citation: H. Seghir et al., CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1104-1111
THE BEHAVIOR OF SINTERED CERAMICS AND FILMS OF TITANIUM-DIOXIDE SUBJECTED TO NONEQUILIBRIUM GAS-MIXTURES, FOR STEADY-STATE CONDITIONS - THEIR USE AS OXYGEN RESISTIVE SENSORS
Authors: JERISIAN R GAUTRON J LOUP JP
Citation: R. Jerisian et al., THE BEHAVIOR OF SINTERED CERAMICS AND FILMS OF TITANIUM-DIOXIDE SUBJECTED TO NONEQUILIBRIUM GAS-MIXTURES, FOR STEADY-STATE CONDITIONS - THEIR USE AS OXYGEN RESISTIVE SENSORS, Journal de physique. III, 2(4), 1992, pp. 679-699
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