Authors: HUANG TY JONG FC CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY

Citation: Ty. Huang et al., IMPROVING RADIATION HARDNESS OF EEPROM FLASH CELL BY N2O ANNEALING/, IEEE electron device letters, 19(7), 1998, pp. 256-258

Authors: JONG FC HUANG TY CHAO TS LIN HC WANG MF CHANG CY

Citation: Fc. Jong et al., EFFECTS OF N2O-ANNEALED SACRIFICIAL OXIDE ON THE SHORT-CHANNEL EFFECTS OF NMOSFETS, Electronics Letters, 34(4), 1998, pp. 404-406

Authors: HUANG TY JONG FC CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY

Citation: Ty. Huang et al., A STUDY ON THE RADIATION HARDNESS OF FLASH CELL WITH HORN-SHAPED FLOATING-GATE, JPN J A P 1, 36(9A), 1997, pp. 5459-5463

Authors: HUANG TY JONG FC LIN HC CHAO TS LEU LY YOUNG K LIN CH CHIU KY

Citation: Ty. Huang et al., EFFECTS OF FLOATING-GATE DOPING CONCENTRATION ON FLASH CELL PERFORMANCE, JPN J A P 1, 36(8), 1997, pp. 5063-5067

Authors: JONG FC HUANG TY CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY

Citation: Fc. Jong et al., IMPROVED FLASH CELL PERFORMANCE BY N2O ANNEALING OF INTERPOLY OXIDE, IEEE electron device letters, 18(7), 1997, pp. 343-345