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Results: 2
GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE
Authors:
JOW MY MAA BY MORISHITA T DAPKUS PD
Citation:
My. Jow et al., GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(1), 1995, pp. 25-29
INGAAS GAAS QUANTUM-WELL LASERS WITH DRY-ETCHED MIRROR PASSIVATED BY VACUUM ATOMIC LAYER EPITAXY/
Authors:
FRATESCHI NC JOW MY DAPKUS PD LEVI AFJ
Citation:
Nc. Frateschi et al., INGAAS GAAS QUANTUM-WELL LASERS WITH DRY-ETCHED MIRROR PASSIVATED BY VACUUM ATOMIC LAYER EPITAXY/, Applied physics letters, 65(14), 1994, pp. 1748-1750
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