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Results: 1-7 |
Results: 7
PHOTOLUMINESCENCE INVESTIGATION OF A DEGENERATE 2-DIMENSIONAL ELECTRON-GAS IN GAN ALGAN HETEROJUNCTION/
Authors: RAYMOND A JUILLAGUET S COUZINET B MEZOUAR IEL KAMALSAADI A KHAN MA CHEN Q YANG JW
Citation: A. Raymond et al., PHOTOLUMINESCENCE INVESTIGATION OF A DEGENERATE 2-DIMENSIONAL ELECTRON-GAS IN GAN ALGAN HETEROJUNCTION/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 211-214
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Authors: STOEHR M AUBEL D JUILLAGUET S BISCHOFF JL KUBLER L BOLMONT D HAMDANI F FRAISSE B FOURCADE R
Citation: M. Stoehr et al., PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001), Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926
STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC
Authors: JUILLAGUET S KUBLER L DIANI M BISCHOFF JL GEWINNER G WETZEL P BECOURT N
Citation: S. Juillaguet et al., STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC, Surface science, 339(3), 1995, pp. 363-371
MORPHOLOGY OF INGAAS INP QWS - FROM EXCITONIC SPECTROSCOPY TO HR-TEM ANALYSES/
Authors: CAMASSEL J JUILLAGUET S SCHWEDLER R WOLTER K BAUMANN FH LEO K LAURENTI JP
Citation: J. Camassel et al., MORPHOLOGY OF INGAAS INP QWS - FROM EXCITONIC SPECTROSCOPY TO HR-TEM ANALYSES/, Journal de physique. IV, 3(C5), 1993, pp. 99-106
GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/
Authors: KOHL A JUILLAGUET S FRAISSE B SCHWEDLER R ROYO F PEYRE H BRUGGEMAN F WOLTER K LEO K KURZ H CAMASSEL J
Citation: A. Kohl et al., GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 244-248
EVIDENCE FOR NONUNIFORM INTERFACE THICKNESS IN STRAINED INGAAS INP QUANTUM-WELLS/
Authors: CAMASSEL J WOLTER K JUILLAGUET S SCHWEDLER R MASSONE E GALLMANN B LAURENTI JP
Citation: J. Camassel et al., EVIDENCE FOR NONUNIFORM INTERFACE THICKNESS IN STRAINED INGAAS INP QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 62-65
NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/
Authors: PEYRE H ALSINA F JUILLAGUET S MASSONE E CAMASSEL J PASCUAL J GLEW RW
Citation: H. Peyre et al., NONDESTRUCTIVE APPROACHES TO INTERDIFFUSION PHENOMENA ACROSS GAINAS GAINASP INTERFACES - PHOTOLUMINESCENCE VS RAMAN/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 73-76
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