AAAAAA

   
Results: 1-7 |
Results: 7
INVERSE MODELING AS A BASIS FOR PREDICTIVE DEVICE SIMULATION OF DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: GOTO H YAMAGUCHI S JUNGEMANN C
Citation: H. Goto et al., INVERSE MODELING AS A BASIS FOR PREDICTIVE DEVICE SIMULATION OF DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 1, 37(10), 1998, pp. 5437-5443
IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE
Authors: JUNGEMANN C MEINERZHAGEN B DECKER S KEITH S YAMAGUCHI S GOTO H
Citation: C. Jungemann et al., IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE, Solid-state electronics, 42(4), 1998, pp. 647-655
EFFECTS OF BAND-STRUCTURE AND PHONON MODELS ON HOT-ELECTRON TRANSPORTIN SILICON
Authors: JUNGEMANN C KEITH S BUFLER FM MEINERZHAGEN B
Citation: C. Jungemann et al., EFFECTS OF BAND-STRUCTURE AND PHONON MODELS ON HOT-ELECTRON TRANSPORTIN SILICON, Electrical engineering, 79(2), 1996, pp. 99-101
ON THE ACCURACY AND EFFICIENCY OF SUBSTRATE CURRENT CALCULATIONS FOR SUB-MU-M N-MOSFETS
Authors: JUNGEMANN C YAMAGUCHI S GOTO H
Citation: C. Jungemann et al., ON THE ACCURACY AND EFFICIENCY OF SUBSTRATE CURRENT CALCULATIONS FOR SUB-MU-M N-MOSFETS, IEEE electron device letters, 17(10), 1996, pp. 464-466
A SOFT THRESHOLD LUCKY ELECTRON MODEL FOR EFFICIENT AND ACCURATE NUMERICAL DEVICE SIMULATION
Authors: JUNGEMANN C THOMA R ENGL WL
Citation: C. Jungemann et al., A SOFT THRESHOLD LUCKY ELECTRON MODEL FOR EFFICIENT AND ACCURATE NUMERICAL DEVICE SIMULATION, Solid-state electronics, 39(7), 1996, pp. 1079-1086
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS
Authors: JUNGEMANN C EMUNDS A ENGL WL
Citation: C. Jungemann et al., SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS, Solid-state electronics, 36(11), 1993, pp. 1529-1540
Risultati: 1-7 |