Authors:
JURKOVIC MJ
ALPERIN J
DU Q
WANG WI
CHANG MF
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Citation: Y. Zhao et al., ENHANCEMENT-MODE INAS N-CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTORS USING BERYLLIUM SHEET DOPING, Solid-state electronics, 42(1), 1998, pp. 57-61
Citation: Y. Zhao et al., KINK-FREE CHARACTERISTICS OF ALSB INAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH PLANAR SI DOPING BENEATH THE CHANNEL/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 341-342
Authors:
JURKOVIC MJ
ALPERIN J
DU Q
WANG WI
CHANG MF
Citation: Mj. Jurkovic et al., ALGAAS GAAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY ON SI (311)/, Electronics Letters, 33(19), 1997, pp. 1658-1659
Citation: Y. Zhao et al., CHARACTERIZATION OF AUGE-BASED AND AUTE-BASED OHMIC CONTACTS ON INAS N-CHANNEL HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of the Electrochemical Society, 144(3), 1997, pp. 1067-1069