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Results: 1-10 |
Results: 10
80 GHz MMIC HEMT VCO
Authors: Radisic, V Samoska, L Micovic, M Hu, M Janke, P Ngo, C Nguyen, L
Citation: V. Radisic et al., 80 GHz MMIC HEMT VCO, IEEE MICR W, 11(8), 2001, pp. 325-327
164-GHz MMIC HEMT doubler
Authors: Radisic, V Micovic, M Hu, M Janke, P Ngo, C Nguyen, L Samoska, L Morgan, M
Citation: V. Radisic et al., 164-GHz MMIC HEMT doubler, IEEE MICR W, 11(6), 2001, pp. 241-243
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasmaassisted molecular beam epitaxy
Authors: Micovic, M Kurdoghlian, A Janke, P Hashimoto, P Wong, DWS Moon, JS McCray, L Nguyen, C
Citation: M. Micovic et al., AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasmaassisted molecular beam epitaxy, IEEE DEVICE, 48(3), 2001, pp. 591-596
GaN/AlGaN HEMTs operating at 20GHz with continuous-wave power density > 6W/mm
Authors: Moon, JS Micovic, M Janke, P Hashimoto, P Wong, WS Widman, RD McCray, L Kurdoghlian, A Nguyen, C
Citation: Js. Moon et al., GaN/AlGaN HEMTs operating at 20GHz with continuous-wave power density > 6W/mm, ELECTR LETT, 37(8), 2001, pp. 528-530
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
Authors: Nguyen, NX Micovic, M Wong, WS Hashimoto, P McCray, LM Janke, P Nguyen, C
Citation: Nx. Nguyen et al., High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE, ELECTR LETT, 36(5), 2000, pp. 468-469
Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10GHz
Authors: Nguyen, NX Micovic, M Wong, WS Hashimoto, P Janke, P Harvey, D Nguyen, C
Citation: Nx. Nguyen et al., Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10GHz, ELECTR LETT, 36(5), 2000, pp. 469-471
Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate
Authors: Micovic, M Matloubian, M Hu, M Harvey, DS Nguyen, C Janke, P
Citation: M. Micovic et al., Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate, ELECTR LETT, 36(4), 2000, pp. 357-358
GaN/AlGaN high electron mobility transistors with f(tau) of 110GHz
Authors: Micovic, M Nguven, NX Janke, P Wong, WS Hashimoto, P McCray, LM Nguyen, C
Citation: M. Micovic et al., GaN/AlGaN high electron mobility transistors with f(tau) of 110GHz, ELECTR LETT, 36(4), 2000, pp. 358-359
W-band InPHEMT MMIC's using finite-ground coplanar waveguide (FGCPW) design
Authors: Matloubian, MYM Petre, P Hamilton, LR Bowen, R Lui, M Sun, HC Ngo, CM Janke, P Baker, DW Robertson, RS
Citation: Mym. Matloubian et al., W-band InPHEMT MMIC's using finite-ground coplanar waveguide (FGCPW) design, IEEE J SOLI, 34(9), 1999, pp. 1212-1218
A high-gain monolithic D-band InPHEMT amplifier
Authors: Pobanz, CW Matloubian, M Lui, M Sun, HC Case, M Ngo, CM Janke, P Gaier, T Samoska, L
Citation: Cw. Pobanz et al., A high-gain monolithic D-band InPHEMT amplifier, IEEE J SOLI, 34(9), 1999, pp. 1219-1224
Risultati: 1-10 |