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Results:
1-13
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Results: 13
Authors:
Arulchakkaravarthi, A
Jayavel, P
Santhanaraghavan, P
Ramasamy, P
Citation: A. Arulchakkaravarthi et al., Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique, J CRYST GR, 234(1), 2002, pp. 159-163
Authors:
Jayavel, P
Kesavamoorthy, R
Santhakumar, K
Magudapathy, P
Nair, KGM
Kumar, J
Citation: P. Jayavel et al., Raman scattering studies on low-energy nitrogen-implanted semi-insulating GaAs, NUCL INST B, 179(1), 2001, pp. 71-77
Authors:
Jayavel, P
Asokan, K
Kanjilal, D
Kumar, J
Citation: P. Jayavel et al., Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes, MAT SC S PR, 3(3), 2000, pp. 195-199
Authors:
Jayavel, P
Asokan, K
Kumar, J
Citation: P. Jayavel et al., Electrical and structural properties of the swift heavy ion irradiated Au/n-GaAs Schottky barrier diodes, RADIAT EFF, 152(3), 2000, pp. 237-245
Authors:
Jayavel, P
Arulkumaran, S
Kumar, J
Premanand, R
Citation: P. Jayavel et al., Investigations on the evaluation of Schottky barrier diode parameters of the proton irradiated Ti/n-GaAs, RADIAT EFF, 152(1), 2000, pp. 39-47
Authors:
Jayavel, P
Kumar, J
Ramasamy, P
Premanand, R
Citation: P. Jayavel et al., On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs, I J ENG M S, 7(5-6), 2000, pp. 340-343
Authors:
Jayavel, P
Ghosh, S
Jhingan, A
Avasthi, DK
Asokan, K
Kumar, J
Citation: P. Jayavel et al., Study on the performance of SI-GaAs and SI-InP surface barrier detectors for alpha and gamma detection, NUCL INST A, 454(1), 2000, pp. 252-256
Authors:
Varatharajan, R
Jayavel, P
Kumar, J
Jayavel, R
Asokan, K
Citation: R. Varatharajan et al., Effects of energetic ions on barium strontium titanate crystals, NUCL INST B, 170(1-2), 2000, pp. 145-148
Authors:
Jayavel, P
Kumar, J
Santhakumar, K
Magudapathy, P
Nair, KGM
Citation: P. Jayavel et al., Investigations on the effect of alpha particle irradiation-induced defectsnear Pd/n-GaAs interface, VACUUM, 57(1), 2000, pp. 51-59
Authors:
Jayavel, P
Kumar, J
Citation: P. Jayavel et J. Kumar, Investigations on the low-energy proton-induced defects on Ti/n-GaAs Schottky barrier diode parameters, J CRYST GR, 210(1-3), 2000, pp. 268-272
Authors:
Jayavel, P
Udhayasankar, M
Kumar, J
Asokan, K
Kanjilal, D
Citation: P. Jayavel et al., Electrical characterisation of high energy C-12 irradiated Au/n-GaAs Schottky Barrier Diodes, NUCL INST B, 156(1-4), 1999, pp. 110-115
Authors:
Jayavel, P
Kumar, J
Ghosh, S
Avasthi, DK
Jhingan, A
Sugathan, P
Asokan, K
Citation: P. Jayavel et al., Evaluation of indium phosphide surface barrier detector using gamma rays, I J PA PHYS, 37(10), 1999, pp. 774-777
Authors:
Sumathi, RR
Dharmarasu, N
Arulkumaran, S
Jayavel, P
Kumar, J
Citation: Rr. Sumathi et al., Improved electrical properties on the anodic oxide InP interface for MOS structures, J ELEC MAT, 27(12), 1998, pp. 1358-1361
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1-13
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