Citation: Jh. Kim et al., Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy, J APPL PHYS, 89(8), 2001, pp. 4407-4409
Citation: Jh. Kim et al., Improved microwave and noise performances of InGaP/In-0.33 a(0.67)As p-HEMT grown on patterned GaAs substrate, ELECTR LETT, 37(15), 2001, pp. 981-983
Citation: Hs. Son et al., Infrared absorption of an In0.2Ga0.8As/GaAs quantum-well infrared photodetector employing a p-n-p camel diode structure, APPL PHYS L, 79(4), 2001, pp. 455-457